CMPA5259050F [CREE]

50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers;
CMPA5259050F
型号: CMPA5259050F
厂家: CREE, INC    CREE, INC
描述:

50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers

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CMPA5259050F  
50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers  
Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron  
Mobility Transistor (HEMT) designed specifically for high  
efficiency, high gain, and wide bandwidth capabilities, which  
makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier  
applications. The transistor is supplied in a 0.5 inch square  
ceramic/metal flange package.  
Typical Performance Over 5.2-5.9 GHz (TC = 25˚C) of Demonstration Amplifier  
Parameter  
5.2 GHz  
5.5 GHz  
5.9 GHz  
Units  
Small Signal Gain  
31.4  
30.8  
31.0  
dB  
Output Power  
Efficiency  
59.6  
51.5  
-12.5  
56.0  
50.1  
-12.0  
55.2  
51.4  
-7.0  
W
%
dB  
Input Return Loss  
Note:  
100 μsec Pulse Width, 10% Duty Cycle, PIN= 26 dBm  
Features  
Applications  
AESA Radar  
30 dB Small Signal Gain  
50% Efficiency at PSAT  
Operation up to 28 V  
High Breakdown Voltage  
0.5 inch-square package  
Defense Radar  
Fire Control Radar  
Naval, Marine, Ground Protection  
Radar  
Weather Radar  
Subject to change without notice.  
www.cree.com/rf  
1
Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature  
Parameter  
Symbol  
VDSS  
VGS  
Rating  
84  
Units  
VDC  
Conditions  
Drain-source Voltage  
Gate-source Voltage  
Storage Temperature  
Operating Junction Temperature  
Soldering Temperature  
Screw Torque  
VDC  
VDC  
˚C  
-10, +2  
-55, +150  
225  
VDC  
TSTG  
TJ  
˚C  
˚C  
˚C  
TS  
245  
˚C  
˚C  
60  
in-oz  
in-oz  
τ
Thermal Resistance, Junction to Case1  
RθJC  
1.60  
˚C/W  
˚C  
PDISS = 61 W, TCASE = 85˚C, 500 μs, 20%  
Case Operating Temperature  
TC  
-40, +105  
Electrostatic Discharge (ESD) Classifications  
Parameter  
Symbol  
HBM  
Class  
Test Methodology  
JEDEC JESD22 A114-D  
JEDEC JESD22 C101-C  
Human Body Model  
Charge Device Model  
1A (> 250 V)  
CDM  
2 (125 V to 250 V)  
Cree, Inc.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
www.cree.com/rf  
2
CMPA5259050F Rev 0.0  
Electrical Characteristics (TC = 25˚C)  
Characteristics  
Symbol  
Min.  
Typ.  
Max.  
Units  
Conditions  
DC Characteristics1  
Gate Threshold Voltage  
Gate Quiescent Voltage  
Saturated Drain Current  
VGS(th)  
VGS(Q)  
IDS  
-3.0  
-
-2.5  
-2.7  
18.6  
100  
-
-
VDC  
VDC  
A
VDS = 10 V, IDS = 1.0 A  
VDS = 10 V, ID = 1.0 A  
VDS = 6 V, VGS = 2 V  
VGS = -8 V, IDS = 1.0 A  
16.4  
84  
Drain-Source Breakdown Voltage  
VBD  
VDC  
RF Characteristics2  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.2 GHz,  
Small Signal Gain1  
Small Signal Gain2  
Small Signal Gain3  
Power Output1  
GSS  
GSS  
GSS  
POUT  
POUT  
POUT  
PAE  
PAE  
PAE  
GP  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
31  
31  
-
-
-
-
-
-
-
-
-
-
-
dB  
dB  
dB  
W
PIN = -20 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.5 GHz,  
PIN = -20 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.9 GHz,  
31  
PIN = -20 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.2 GHz,  
59.5  
56  
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.5 GHz,  
Power Output2  
W
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.9 GHz,  
Power Output3  
55  
W
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.2 GHz,  
Power Added Efficiency1  
Power Added Efficiency2  
Power Added Efficiency3  
Power Gain1  
51  
%
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.5 GHz,  
50  
%
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.9 GHz,  
51  
%
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.2 GHz,  
21.8  
21.5  
21.4  
-12  
-17  
dB  
dB  
dB  
dB  
dB  
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.5 GHz,  
Power Gain2  
GP  
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.9 GHz,  
Power Gain3  
GP  
PIN = 26 dBm  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.2 - 5.9  
GHz, PIN = -20 dBm  
Input Return Loss  
Output Return Loss  
S11  
S22  
VDD = 28 V, IDQ = 1.0 A, Freq = 5.2 - 5.9  
GHz, PIN = -20 dBm  
No damage at all phase angles, VDD  
28 V,  
=
Y
Output Mismatch Stress  
VSWR  
3:1  
-
IDQ = 1.0 A, PIN = 26 dBm  
Notes:  
1
Measured on wafer prior to packaging.  
Measured in CMPA5259050F-TB test fixture.  
Drain Efficiency = POUT/PDC  
2
3
Cree, Inc.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
www.cree.com/rf  
3
CMPA5259050F Rev 0.0  
Typical Pulsed Performance of the CMPA5259050F  
Figure 1. - Gain and Input Return Loss vs. Frequency of the CMPA5259050F  
Measured in CMPA5259050F-AMP Amplifier Circuit  
VDD = 28 V, IDQ = 1.0 A, TC = 25°C  
Figure 2. - Output Power, Gain, and Power Added Efficiency vs. Frequency of the  
CMPA5259050F Measured in CMPA525050F-AMP Amplifier Circuit  
VDD = 28 V, IDQ = 1.0 A, PIN = 26 dBm, Pulse Width = 100 μs,  
Duty Cycle = 10%, TC = 25°C  
PAE  
Outout Power  
Gain  
Cree, Inc.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
www.cree.com/rf  
4
CMPA5259050F Rev 0.0  
Typical Pulsed Performance of the CMPA5259050F  
Figure 3. - Gain and Power Added Efficiency vs. Output Power of the CMPA529050F  
Measured in CMPA525050F-AMP Amplifier Circuit  
VDD = 28 V, IDQ = 1.0 A, Pulse Width = 100 μs, Duty Cycle = 10%, TC = 25°C  
Gain  
PAE  
Cree, Inc.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
www.cree.com/rf  
5
CMPA5259050F Rev 0.0  
CMPA5259050F-TB Demonstration Amplifier Schematic  
CMPA5259050F-TB Demonstration Amplifier Circuit Outline  
CMPA5259050F  
Cree, Inc.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
www.cree.com/rf  
6
CMPA5259050F Rev 0.0  
CMPA5259050F-TB Demonstration Amplifier Circuit Bill of Materials  
Designator  
Description  
RES 0 OHM, SMT, 1206, 125 mW  
Qty  
R1  
1
C1, C3, C6, C8  
CAP, 100000 pF, (0.1 UF) +/- 10%, 100 V, 0805  
CAP, 0805, 2200 pF, 100 V, 0805  
CAP, 10 UF, 16 V, Tantalum  
4
4
1
1
1
2
1
1
4
4
4
4
1
C2, C4, C5, C7  
C9  
C10  
J3  
CAP, 33 UF, 20%, G Case  
Header RT> PLZ .1 CEN LK 5POS  
CONN, SMA, Female, 2-Hole, Flange  
CONN, SMB, Straight Jack Receptacle, SMT, 50 OHM, Au Plated  
Baseplate, AL, 2.60 X 1.7 X 0.25  
#4 Split Lockwasher SS  
J1, J2  
J4  
2-56 SoC HD Screw 3/16 SS  
#2 Split Lockwasher SS  
4-40 SOC HD Screw 3/8” SS  
PCB, Taconics, RF 35, CMPA5259050F 0.010” THK  
Wire, Black, 22 AWG ~ 3”  
W1  
CMPA5259050F-TB Demonstration Amplifier Circuit  
Cree, Inc.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
www.cree.com/rf  
7
CMPA5259050F Rev 0.0  
Product Dimensions CMPA5259050F (Package Type — 440219)  
1
4
5
6
2
3
7
PIN  
1
2
3
4
5
6
7
Gate bias  
RFIN  
Gate bias  
Drain bias  
RFOUT  
Drain bias  
Source  
Cree, Inc.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
www.cree.com/rf  
8
CMPA5259050F Rev 0.0  
Part Number System  
CMPA5259050F  
Package  
Power Output (W)  
Upper Frequency (GHz)  
Lower Frequency (GHz)  
CreeMMICPowerAmplifierProductLine  
Parameter  
Value  
Units  
Lower Frequency  
Upper Frequency1  
Power Output  
Package  
5.2  
5.9  
GHz  
GHz  
W
50  
Flange  
-
Table 1.  
Note1: Alpha characters used in frequency  
code indicate a value greater than 9.9 GHz.  
See Table 2 for value.  
Character Code  
Code Value  
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
G
H
J
K
1A = 10.0 GHz  
2H = 27.0 GHz  
Examples:  
Table 2.  
Cree, Inc.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
www.cree.com/rf  
9
CMPA5259050F Rev 0.0  
Product Ordering Information  
Order Number  
Description  
Unit of Measure  
Image  
CMPA5259050F  
GaN MMIC  
Each  
CMPA5259050F-AMP  
Test board with GaN MMIC installed  
Each  
Cree, Inc.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
www.cree.com/rf  
10  
CMPA5259050F Rev 0.0  
Disclaimer  
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet  
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents  
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under  
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities  
and are provided for information purposes only. These values can and do vary in different applications, and actual  
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each  
application. Cree products are not designed, intended, or authorized for use as components in applications intended for  
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could  
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a  
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.  
For more information, please contact:  
Cree, Inc.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
www.cree.com/RF  
Sarah Miller  
Marketing  
Cree, RF Components  
1.919.407.5302  
Ryan Baker  
Marketing & Sales  
Cree, RF Components  
1.919.407.7816  
Tom Dekker  
Sales Director  
Cree, RF Components  
1.919.407.5639  
Cree, Inc.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective  
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.869.2733  
www.cree.com/rf  
11  
CMPA5259050F Rev 0.0  

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