CMPA2735075F1 [CREE]
RF/Microwave Amplifier,;
| 型号： | CMPA2735075F1 |
| 厂家： | 
CREE, INC |
| 描述： | RF/Microwave Amplifier, |
| 文件： | 总10页 (文件大小：1157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA2735075F1
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN
HEMTs also offer greater power density and wider bandwidths compared to Si and
GaAs transistors. This MMIC contains a two-stage reactively matched amplifier
design approach enabling very wide bandwidths to be achieved.
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)
Parameter
2.7 GHz
29
2.9 GHz
29
3.1 GHz
30
3.3 GHz
29
3.5 GHz
29
Units
dB
W
Small Signal Gain
Saturated Output Power
63
74
86
80
79
PAE @ PSAT
45
54
57
57
57
%
Note: PIN = 28 dBm
Features
Applications
•
•
•
•
29 dB Small Signal Gain
•
Civil and Military Pulsed Radar Amplifiers
76 W Typical PSAT
28 V Operation
High Breakdown Voltage
•
•
High Temperature Operation
0.5” x 0.5” Total Product Size
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
Rating
84
Units
VDC
VDC
˚C
Conditions
25°C
Drain-source Voltage
Gate-source Voltage
VGS
-10, +2
-65, +150
225
25°C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Screw Torque
T
˚C
J
IG
T
28
mA
25°C
40
in-oz
˚C/W
˚C/W
Thermal Resistance, Junction to Case (packaged) 1
Thermal Resistance, Junction to Case (packaged)2
RθJC
RθJC
0.77
2.0
300 μsec, 20%, 85°C
CW, 85°C
Notes:
1 Measured for the CMPA2735075F1 at PDISS = 64 W (pulsed)
2 Measured for the CMPA2735075F1 at PDISS = 56 W (CW)
Electrical Characteristics (Frequency = 2.7 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
VGS(TH)
-3.8
-3.0
-2.3
V
VDS = 10 V, ID = 28 mA
Gate Quiescent Voltage
Saturated Drain Current1
Drain-Source Breakdown Voltage
RF Characteristics2,3
VGS(Q)
IDS
–
-2.7
27.4
–
–
–
–
VDC
A
VDD = 28 V, IDQ = 800 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28 mA
19.6
84
VBD
V
Small Signal Gain
Input Return Loss
Output Return Loss
S21
S11
S22
26.5
–
28.6
-14.4
-10.3
–
-10
-7
dB
dB
dB
VDD = 28 V, IDQ = 800 mA, Freq = 2.7 - 3.5 GHz
VDD = 28 V, IDQ = 800 mA, Freq = 2.7 - 3.5 GHz
VDD = 28 V, IDQ = 800 mA, Freq = 2.7 - 3.5 GHz
–
Output Power
POUT1
45.7
63
–
W
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 2.7 GHz
Output Power
POUT2
POUT3
POUT4
POUT5
PAE1
PAE2
PAE3
PAE4
PAE5
VSWR
60.2
66.1
66.1
66.1
–
74
86
80
79
45
54
57
57
57
–
–
–
W
W
W
W
%
%
%
%
%
Y
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 2.9 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 3.1 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 3.3 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 3.5 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 2.7 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 2.9 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 3.1 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 3.3 GHz
VDD = 28 V, IDQ = 800 mA, PIN = 28 dBm, Freq = 3.5 GHz
No damage at all phase angles, VDD = 28 V, IDQ = 800mA, POUT = 75 W
Output Power
Output Power
–
Output Power
–
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Output Mismatch Stress
–
45
–
49
–
48
–
48
–
–
5 : 1
Notes:
1 Scaled from PCM data.
2 All data pulse tested in CMPA2735075F1-AMP
3 Pulse Width = 300 μS, Duty Cycle = 20%.
Cree, Inc.
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
2
CMPA2735075F1 Rev 0.0
Typical Performance of the CMPA2735075F1
Figure 1. - Gain and Return Losses vs Frequency of the CMPA2735075F1
Measured in CMPA2735075F1-AMP Amplifier Circuit
VDS = 28 V, IDS = 800 mA
Figure 2. - Output Power, Gain and PAE vs Frequency of the CMPA2735075F1
Measured in CMPA2735075F1-AMP Amplifier Circuit
VDS = 28 V, IDS = 800 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA2735075F1 Rev 0.0
www.cree.com/rf
Typical Pulse Droop Performance
49.7
Pulse Width
10 us
Duty Cycle (%)
5-25
Droop (dB)
0.10
50 us
5-25
0.10
100 us
300 us
1 ms
5-25
0.10
5-25
0.20
5-25
0.20
5 ms
5-25
0.20
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
Human Body Model
Charge Device Model
1A (> 250 V)
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
CDM
II (200 < 500 V)
Cree, Inc.
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
4
CMPA2735075F1 Rev 0.0
CMPA2735075F1-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
L1
R1
FERRITE, 22 OHM, 0805
1
1
1
1
1
1
1
2
1
1
4
1
2
4
1
1
RES,1/8W,1206,5%, 0 OHM
R2
RES, 1/16W, 0603, 5%, 10K
C1
CAP, 15000PF,100V,0805,X7R
C2
CAP, 1000uF, 20%, 50V, ELECT, MVY, SMD
CABLE, 18 AWG, 4.2
W1
J4
CONNECTOR; SMB, Straight JACK, SMD
CONN,N,FEM,W/.500 SMA FLNG
DC CONN, HEADER RT>PLZ .1CEN LK 9POS
CMPA2735075F1
J1,J2
J3
Q1
2-56 SOC HD SCREW 1/4 SS (For Device)
WIRE ASSEMBLY, 9-PIN, TEST FIXTURE
LEAD CLAMP, DELRIN
2-56 SOC HD SCREW 1/2 SS (For Clamps)
INDIUM TIM, AL CLAD, .47”x .30” x .003”
TEST FIXTURE INSTRUCTIONS
CMPA2735075F1-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
rfsales@cree.com
www.cree.com/rf
5
CMPA2735075F1 Rev 0.0
CMPA2735075F1-AMP Demonstration Amplifier Circuit Schematic
CMPA2735075F1-AMP Demonstration Amplifier Circuit Outline
W1
C2
R1
J1
J2
3-000939 REV2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
rfsales@cree.com
www.cree.com/rf
6
CMPA2735075F1 Rev 0.0
Product Dimensions CMPA2735075F1 (Package Type — 440219)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
rfsales@cree.com
www.cree.com/rf
7
CMPA2735075F1 Rev 0.0
Part Number System
CMPA2735075F1
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
Upper Frequency
Power Output
Package
2.7
3.5
GHz
GHz
W
75
Flange
-
Table 1.
Note: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
rfsales@cree.com
www.cree.com/rf
8
CMPA2735075F1 Rev 0.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CMPA2735075F1
GaN HEMT
Each
CMPA2735075F1-AMP
Test board with GaN MMIC installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
9
CMPA2735075F1 Rev 0.0
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
rfsales@cree.com
www.cree.com/RF
Cree, Inc.
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
10
CMPA2735075F1 Rev 0.0
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