CGHV40100P [CREE]
100 W, DC - 4.0 GHz, 50 V, GaN HEMT;
| 型号： | CGHV40100P |
| 厂家： | 
CREE, INC |
| 描述： | 100 W, DC - 4.0 GHz, 50 V, GaN HEMT |
| 文件： | 总11页 (文件大小：1088K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV40100
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electro
mobility transistor (HEMT). The CGHV40100, operating from a 50 vo
rail, offers a general purpose, broadband solution to a variety of RF an
microwave applications. GaN HEMTs offer high efficiency, high gain an
wide bandwidth capabilities making the CGHV40100 ideal for linear and
compressed amplifier circuits. The transistor is available in a 2-lead flange
and pill package.
Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V
Parameter
500 MHz
1.0 GHz
1.5 GHz
2.0 GHz
2.5 GHz
Units
Small Signal Gain
17.6
16.9
17.7
17.5
14.8
dB
Saturated Output Power
Drain Efficiency @ PSAT
Input Return Loss
Note:
147
68
6
100
56
141
58
116
54
112
54
W
%
5.1
10.5
5.5
8.8
dB
Measured CW in the CGHV40100F-AMP application circuit.
Features
•
•
•
•
•
•
Up to 4 GHz Operation
100 W Typical Output Power
17.5 dB Small Signal Gain at 2.0 GHz
Application Circuit for 0.5 - 2.5 GHz
55 % Efficiency at PSAT
50 V Operation
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
125
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
20.8
mA
A
25˚C
25˚C
8.7
245
˚C
40
in-oz
˚C/W
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
1.62
85˚C
85˚C
1.72
-40, +150
30 seconds
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGHV40100P at PDISS = 83 W.
4 Measured for the CGHV40100F at PDISS = 83 W.
5 See also, Power Derating Curve on Page 7
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
18.7
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 20.8 mA
VDS = 50 V, ID = 0.6 A
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
15.6
150
–
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 20.8 mA
VBR
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)
Small Signal Gain
Power Gain
GSS
GP
–
–
17.5
11.0
–
–
dB
dB
VDD = 50 V, IDQ = 0.6 A
VDD = 50 V, IDQ = 0.6 A, POUT = PSAT
Power Output at Saturation4
PSAT
–
–
116
–
–
W
%
VDD = 50 V, IDQ = 0.6 A
η
Drain Efficiency
54
VDD = 50 V, IDQ = 0.6 A, POUT = PSAT
No damage at all phase angles,
VDD = 50 V, IDQ = 0.6 A,
POUT = 100 W CW
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics5
Input Capacitance
CGS
CDS
CGD
–
–
–
29.3
7.3
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
0.61
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV40100-AMP
4 PSAT is defined as IG
5 Includes package
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
2
CGHV40100 Rev 3.0
www.cree.com/rf
CGHV40100 Typical Performance
Figure 1. - Small Signal Gain and Return Losses versus Frequency measured in
application circuit CGHV40100-AMP
VDD = 50 V, IDQ = 600 mA, Tcase = 25°C
24
20
16
12
8
S11
S21
S22
4
0
-4
-8
-12
-16
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Figure 2. - Output Power and Drain Efficiency vs Frequency
VDD = 50 V, IDQ = 600 mA
70
38
Output Power
Drain Efficiency
Gain
68
66
64
62
60
58
56
54
52
50
48
46
44
42
40
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
Drain Efficiency
Output Power
Gain
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
3
CGHV40100 Rev 3.0
www.cree.com/rf
CGHV40100 Typical Performance
Figure 3. - Third Order Intermodulation Distortion vs Average Output Power
measured in Broadband Amplifier Circuit CGHV40100-AMP
Spacing = 1 MHz, VDD = 50 V, IDQ = 600 mA, Tcase = 25°C
0
-5
0.5 GHz
1.5 GHz
2.5 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
27
29
31
33
35
37
39
41
43
45
47
Average Output Power (dBm)
Figure 4. - Third Order Intermodulation Distortion vs Frequency
measured in Broadband Amplifier Circuit CGHV40100-AMP
Spacing = 1 MHz, VDD = 50 V, IDQ = 600 mA, Tcase = 25°C
0
-5
-10
-15
-20
-25
-35
-40
-45
-50
-55
-60
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
4
CGHV40100 Rev 3.0
www.cree.com/rf
CGHV40100 Typical Performance
Figure 5. - GMAX and K-Factor vs Frequency
VDD = 50 V, IDQ = 600 mA, Tcase = 25°C
45
40
35
30
25
20
1.25
1
Gmax
K-Factor
0.75
0.5
0.25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
5
CGHV40100 Rev 3.0
www.cree.com/rf
CGHV40100-AMP Application Circuit Schematic
CGHV40100-AMP Application Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
6
CGHV40100 Rev 3.0
www.cree.com/rf
CGHV40100-AMP Application Circuit Bill of Materials
Designator
Description
Qty
C1, C13, C15
C2
CAP, 39 pF, ± 0.1 pF, 250V, 0805, ATC600F
CAP, 7.5 pF, ± 0.1 pF, 250 V, 0806, ATC600F
CAP, 3 pF ± 0.1 pF, 250 V, 0805, ATC600F
CAP, 1.5 pF, ± 0.1 pF, 250 V, 0805, ATC600F
CAP, 33000 pF, 0805 100V, X7R
3
1
1
2
1
2
1
2
2
1
1
1
1
2
1
1
1
C3
C4, C5
C7
C6, C14
C8
CAP, 240 pF, ± 0.5 pF, 250 V, 0805, ATC600F
CAP, 10 UF, 16V TANTALUM, 2312
CAP, 1 pF, ± 0.1 pF, 250 V, 0805, ATC600F
CAP, 0.5 pF, ± 0.1 pF, 250 V, 0805, ATC600F
CAP, 100 UF, 20%, 160 V, ELEC
C9, C10
C11, C12
C16
R1
RES, 24 OHMS, IMS ND3-1005CS24R0G
RED, 100 OHMS, IMS ND3-0805EW1000G
RES, 3.9 OHMS, 0805
R2
R3
J1, J2
J3
CONN, SMA, PANEL MOUNT JACK
HEADER RT>PLZ .1CEN LK 9POS
BASEPLATE, CGH35120
PCB, RO4350B, 2.5” X 4” X 0.020”, CGHV40100F
CGHV40100-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
7
CGHV40100 Rev 3.0
www.cree.com/rf
CGHV40100 Power Dissipation De-rating Curve
Figure 5. - Transient Power Dissipation De-Rating Curve
90
80
70
60
50
40
30
20
10
0
Note 1
Flange - CW
Pill - CW
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
8
CGHV40100 Rev 3.0
www.cree.com/rf
Product Dimensions CGHV40100F (Package Type — 440193)
Product Dimensions CGHV40100P (Package Type — 440206)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
9
CGHV40100 Rev 3.0
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV40100F
GaN HEMT
Each
CGHV40100P
CGHV40100-TB
CGHV40100F-AMP
GaN HEMT
Each
Each
Each
Test board without GaN HEMT
Test board with GaN HEMT (flanged)
installed
CGHV40100P-AMP
Test board with GaN HEMT(pill) installed
Each
Photo TBD
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
10
CGHV40100 Rev 3.0
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
11
CGHV40100 Rev 3.0
www.cree.com/rf
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