CGHV59070 [CREE]
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT;
| 型号： | CGHV59070 |
| 厂家： | 
CREE, INC |
| 描述： | 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT |
| 文件： | 总10页 (文件大小：915K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
CGHV59070
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transist
(HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadban
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, hig
gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed
amplifier circuits. The transistor is available in a flange and pill package.
Typical Performance Over 4.8 - 5.9 GHz (TC = 25˚C)
Parameter
4.8 GHz
13.7
84
5.0 GHz
14.2
93
5.2 GHz
14.5
101
5.4 GHz
14.6
102
5.6 GHz
14.3
95
5.8 GHz
13.7
84
5.9 GHz
13.3
76
Units
dB
W
Power Gain at 50 V
Output Power at 50 V
Drain Efficiency at 50 V
55
56
57
56
54
50
48
%
Note: Measured in CGHV59070F-AMP (838269) under 100 µS pulse width,10% duty, Pin = 35.5 dBm (3.5 W)
Features
Applications
•
•
•
•
•
4.4 - 5.9 GHz Operation
•
•
•
•
•
•
•
•
Marine Radar
90 W POUT typical at 50 V
14 dB Power Gain
Weather Monitoring
Air Traffic Control
55 % Drain Efficiency
Internally Matched
Maritime Vessel Traffic Control
Port Security
Troposcatter Communications
Beyond Line of Sight - BLOS
Satellite Communications
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Symbol
VDSS
Rating
150
Units
Volts
Volts
˚C
Conditions
25˚C
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
T
˚C
J
IGMAX
IDMAX
TS
10.4
mA
A
25˚C
25˚C
6.3
Soldering Temperature2
245
˚C
Screw Torque
40
in-oz
˚C/W
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case3
Case Operating Temperature2
RθJC
RθJC
TC
2.99
85˚C, CW @ PDISS = 57 W
0.85
85˚C, 100 μsec, 10% Duty Cycle @ PDISS = 70 W
-40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Simulated for the CGHV59070F at PDISS = 57.6 CW or PDISS = 70 W Pulsed
4 See also, the Power Dissipation De-rating Curve on Page 8.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
Saturated Drain Current2
VGS(th)
IDS
-3.8
7.8
-2.8
-2.3
–
VDC
A
VDS = 10 V, ID = 10.4 mA
VDS = 6.0 V, VGS = 2.0 V
10.4
Drain-Source Breakdown
Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 10.4 mA
RF Characteristics3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Output Power
Output Power
Output Power
Drain Efficiency
Drain Efficiency
Drain Efficiency
Power Gain
POUT1
POUT1
POUT1
EFF1
EFF2
EFF3
PG1
–
–
–
–
–
–
–
–
–
–
100
95
–
–
W
W
W
%
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.2 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.55 GHz
VDD = 50 V, IDQ = 0.15 A, PIN = 35.5 dBm, Freq = 5.9 GHz
No damage at all phase angles, VDD = 50 V, IDQ = 0.15A, PIN = 35.5 dBm Pulsed
76
–
57
–
54
–
%
48
–
%
14.5
14.3
13.3
–
–
dB
dB
dB
Y
Power Gain
PG2
–
Power Gain
PG3
–
Output Mismatch Stress
VSWR
5 : 1
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
36
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
109
0.26
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV59070F-AMP
4 Drain Efficiency = POUT / PDC
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV59070 Rev 1.0
Typical Performance
Figure 1 - Small Signal Gain and Return Losses of
the CGHV59070-AMP vs Frequency
VDD = 50 V, IDQ = 150 mA
Figure 2 - Power Gain, Drain Efficiency, and Output Power vs Frequency measured
in Amplifier Circuit CGHV59070P-AMP
VDD = 50 V, IDQ = 150 mA, PIN = 35.5 dBm, Pulse Width = 100 μsec, Duty Cycle = 10%
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV59070 Rev 1.0
Typical Performance
Figure 3 - Maximum Available Gain and K Factor of the CGHV59070
VDD = 50 V, IDQ = 150 mA
Figure 4 - Power Gain, Drain Efficiency and Output Power vs Input Power of the CGHV59070
VDD = 50 V, IDQ = 150 mA, Pulse Width = 100 μsec, Duty Cycle = 10%
120
100
80
60
40
20
0
60
50
40
30
20
10
0
5.20GHz, Pout
5.20GHz, Gain
5.20GHz, Eff
5.55GHz, Pout
5.55GHz, Gain
5.55GHz, Eff
5.90GHz, Pout
5.90GHz, Gain
5.90GHz, Eff
16
18
20
22
24
26
28
30
32
34
36
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV59070 Rev 1.0
Simulated Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
4400
Z Source
2.6 - j12.9
3.8 - j14.2
5.8 - j15.3
8.8 - j15.4
8.8 - j14.7
8.5 - j14.5
8.1 - j14.2
7.8 - j13.9
7.5 - j13.6
7.2 - j13.3
6.9 - j13.3
6.6 - j12.7
Z Load
14.0 - j6.9
15.0 - j6.7
16.0 - j7.0
16.7 - j8.0
17.1 - j9.1
16.9 - j10.0
16.5 - j10.7
15.4 - j11.4
15.4 - j12.0
14.6 - j12.5
13.8 - j12.8
12.9 - j13.1
4600
4800
5000
5200
5300
5400
5500
5600
5700
5800
5900
Note 1. VDD = 50 V, IDQ = 150 mA in the 440224 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be used to
maintain amplifier stability.
CGHV59070 Power Dissipation De-rating Curve, CW and Pulse (100 μsec, 10%)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV59070 Rev 1.0
CGHV59070-AMP Demonstration Amplifier Circuit Schematic
CGHV59070-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV59070 Rev 1.0
CGHV59070-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 15,OHM, +/- 1%, 1/16W, 0402
RES,1/16W,0603,1%,10.0 OHMS
CAP, 4.7 pF,+/-0.1pF, 0603, ATC600S
CAP, 1.3 pF,+/-0.1pF, 0603, ATC600S
CAP, 2.0 pF,+/-0.1pF, 0603, ATC600S
CAP, 2.0 pF, +/- 0.05 pF, 0402, ATC
CAP, 10pF,+/-5%, 0603, ATC
1
1
1
1
1
1
2
2
2
1
1
1
1
2
1
1
C1
C10
C3,C11
C2
C4,C12
C5,C13
C6,C14
C15
C7
CAP, 470PF, 5%, 100V, 0603, X
CAP, 33000PF, 0805,100V, X7R
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP 10UF 16V TANTALUM
W1
CABLE ,18 AWG, 4.2 inch
C16
J1,J2
J3
CAP, 470uF, 20%, 80V, ELECT, SMD Size K
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE
HEADER RT>PLZ .1CEN LK 9POS
CONNECTOR ; SMB, Straight, JACK,SMD
J4
CGHV59070-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV59070 Rev 1.0
Product Dimensions CGHV59070F (Package Type — 440224)
Product Dimensions CGHV59070P (Package Type — 440170)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV59070 Rev 1.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV59070F
GaN HEMT
Each
CGHV59070P
GaN HEMT
Each
CGHV59070F-TB
Test board without GaN HEMT
Each
CGHV59070F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV59070 Rev 1.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV59070 Rev 1.0
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