CGHV59350P [CREE]

RF Power Field-Effect Transistor,;

CGHV59350P


型号：	CGHV59350P
厂家：	CREE, INC
描述：	RF Power Field-Effect Transistor,
文件：	总14页 (文件大小：3056K)
下载：	下载PDF数据表文档文件

CGHV59350-TB

350 W, 5200 - 5900 MHz, 50-Ohm Input

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1 CREE

CGHV60040D

40 W, 6.0 GHz, GaN HEMT Die

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2 CREE

CGHV60075D

75 W, 6.0 GHz, GaN HEMT Die

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8 CREE

CGHV60075D5

19 dB Typical Small Signal Gain at 4 GHz

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0 CREE

CGHV60170D

170 W, 6.0 GHz, 50V GaN HEMT Die

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1 CREE

CGHV96050F1

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGHV96050F1-AMP

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGHV96050F1-TB

50 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGHV96050F2

50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

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2 CREE

CGHV96100F2

100 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGHV96100F2-AMP

100 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGHV96100F2-JMT

100 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGHV96100F2-TB

100 W, 7.9 - 9.6 GHz, 50-ohm, Input

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0 CREE

CGIP.25.4.A.02

Wide Operation Band

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0 TAOGLAS

CGIP254A02

25mm Iridium Ceramic Patch Antenna

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0 TAOGLAS

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