CGHV50200F [CREE]
200 W, 4400 - 5000 MHz, 50-Ohm Input;
| 型号： | CGHV50200F |
| 厂家： | 
CREE, INC |
| 描述： | 200 W, 4400 - 5000 MHz, 50-Ohm Input |
| 文件： | 总15页 (文件大小：2814K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEM
designed specifically with high efficiency, high gain and wide bandwidth capabilities, whi
makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCo
applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use
It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor i
supplied in a ceramic/metal flange package, type 440215.
Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
Units
Small Signal Gain
14.9
14.9
14.9
15.1
dB
CW Output Power1
Output Power2
173
100
11.4
49
177
100
11.6
47
170
126
11.0
48
166
101
11.8
48
W
W
dB
%
Power Gain2
Power Added Efficiency2
1Note: Measured CW in the CGHV50200F-AMP at PIN = 43 dBm
2Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV50200F-AMP1 under OQPSK modulation, 1.6 Msps, PN23,
Alpha Filter = 0.2.
Features
Applications
•
•
•
•
•
4.4 - 5.0 GHz Operation
•
•
•
Troposcatter Communications
180 W Typical PSAT
Beyond Line of Sight – BLOS
Satellite Communications
11.5 dB Typical Power Gain
48% Typical Power Efficiency
50 Ohm Internally Matched
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
125
Volts
25˚C
Gate-to-Source Voltage
VGS
10, +2
-65, +150
225
Volts
˚C
25˚C
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
T
˚C
J
IGMAX
IDMAX
TS
41.6
mA
A
25˚C
25˚C
17
245
˚C
Screw Torque
40
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case
Case Operating Temperature3
RθJC
0.81
CW, 85˚C, PDISS = 166.4 W
30 seconds
TC
-40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 See also, Power Dissipation Derating Curve on page 12
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current2
VGS(th)
VGS(Q)
IDS
-3.4
–
-3.0
-2.7
37.4
–
-2.6
–
VDC
VDC
A
VDS = 10 V, ID = 41.6 mA
VDS = 50 V, ID = 1.0 A
VDS = 6 V, VGS = 2 V
33.28
150
–
Drain-Source Breakdown Voltage
VBR
–
VDC
VGS = -8 V, ID = 41.6 mA
RF Characteristics3 (TC = 25˚C, F0 = 4.4 - 5.0 GHz unless otherwise noted)
Small Signal Gain
Small Signal Gain
Small Signal Gain
Power Gain4
GSS1
GSS2
–
–
–
–
–
–
–
–
–
–
–
–
15.4
15.3
15.2
12.1
12.4
12.2
45
–
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
%
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm
GSS3
GP1
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
Power Gain4
GP2
Power Gain4
GP3
Power Added Efficiency4
Power Added Efficiency4
Power Added Efficiency4
OQPSK Linearity4
OQPSK Linearity4
OQPSK Linearity4
PAE1
PAE2
PAE3
ACLR1
ACLR2
ACLR3
36
%
35
%
-29
dBc
dBc
dBc
-34
-34
No damage at all phase angles,
VDD = 40 V, ID = 1.0 A, CW POUT = 180 W
Y
Output Mismatch Stress
VSWR
–
–
3 : 1
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV50200F-AMP
4 Measured under 1.6 Msps OQPSK Modulation, PN23, Alpha Filter = 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV50200F Rev 1.1
Typical Performance
Figure 1. - Small Signal S-parameters
CGHV50200F in Test Fixture
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
16
S21
S11
S22
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
Frequency (GHz)
Figure 2. - Modulated @ Spectral Regrowth = -30dBc, 1.6 MHz from Carrier
1.6 Msps OQPSK Modulation
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
60
55
50
45
40
35
30
25
Pout
20
Gain
15
PAE
10
5
0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV50200F Rev 1.1
Typical Performance
Figure 3. - Spectral Mask @ Average Output Power = 48dBm
1.6 Msps OQPSK Modulation
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
10
5
0
4.4 GHz
4.8 GHz
5 GHz
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
Frequency Offset (MHz)
Figure 4. - Modulated Power Sweep
1.6 Msps OQPSK Modulation
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
20
65
15
10
60
55
50
45
40
35
30
25
20
15
10
5
5
Gain 4.4 GHz
SR 4.4 GHz
Gain 4.8 GHz
SR 4.8 GHz
Gain 5 GHz
SR 5 GHz
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
PAE 4.4 GHz
PAE 4.8 GHz
PAE 5 GHz
0
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
Average Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV50200F Rev 1.1
Typical Performance
Figure 5. - Modulated Power Sweep
1.6 Msps OQPSK Modulation
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Id 4.4 GHz
Id 4.8 GHz
Id 5 GHz
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
Average Output Power (dBm)
Figure 6. - Two Tone Power Sweep
IMD3 @ 1 MHz Carrier Spacing
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
0
IMD3 4.4 GHz
IMD3 4.8 GHz
IMD3 5 GHz
-5
-10
-15
-20
-30
-35
-40
-45
30
32
34
36
38
40
42
44
46
48
50
52
Average Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV50200F Rev 1.1
Typical Performance
Figure 7. - Two Tone Power Sweep
IMD @ 1 MHz Carrier Spacing, 4.4 GHz
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
0
-10
-20
-30
-40
-50
-60
-70
IMD3 4.4 GHz
IMD5 4.4 GHz
IMD7 4.4 GHz
30
32
34
36
38
40
42
44
46
48
50
52
Average Output Power (dBm)
Figure 8. - Two Tone Carrier Spacing Sweep
@ 48 dBm Average Ouput Power, 4.4 GHz
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
0
-IMD3
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
0.1
1.0
10.0
100.0
Carrier Spacing (MHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV50200F Rev 1.1
Typical Performance
Figure 9. - Pulsed vs Frequency @ PIN = 43 dBm
CGHV50200F in Test Fixture
10% Duty, 100 uS Pulse Width
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
65
60
55
50
45
40
35
30
25
20
15
10
5
Pout
Gain
PAE
0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
Frequency (GHz)
Figure 10. - Pulsed Power Sweep
CGHV50200F in Test Fixture
10% Duty, 100 uS Pulse Width
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
65
60
55
50
45
40
35
30
25
20
15
10
5
Pout 4.4 GHz
Pout 4.8 GHz
Pout 5 GHz
Gain 4.4 GHz
Gain 4.8 GHz
Gain 5 GHz
PAE 4.4 GHz
PAE 4.8 GHz
PAE 5 GHz
0
20
22
24
26
28
30
32
34
36
38
40
42
44
46
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV50200F Rev 1.1
Typical Performance
Figure 11. - AM-AM
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
16
15
14
13
12
11
10
9
4.4 GHz
4.8 GHz
5 GHz
7
6
5
4
3
2
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
Input Power (dBm)
Figure 12. - AM-PM
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
16
14
12
10
8
4.4 GHz
4.8 GHz
5 GHz
6
4
2
0
-2
-4
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV50200F Rev 1.1
CGHV50200F-AMP Demonstration Amplifier Circuit
CGHV50200F-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV50200F Rev 1.1
CGHV50200F-AMP Demonstration Amplifier Circuit Schematic
CGHV50200F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
C1,C6
C2
RES, 5.1,OHM, +/- 1%, 1/16W,0603
CAP, 4.7PF, +/-1%,250V, 0805,
CAP, 2.4pF, +/- 0.25 pF,250V, 0603
CAP, 470PF, 5%, 100V, 0603, X
CAP,33000PF, 0805,100V, X7R
CAP 10UF 16V TANTALUM
CAP, 2.0PF, +/-1%,250V, 0805,
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP, 33 UF, 20%, G CASE
1
2
1
2
2
1
1
1
1
2
1
1
4
4
1
C3,C8
C4,C9
C5
C7
C10
C11
J1,J2
J3
CONN, SMA, PANEL MOUNT JACK
HEADER RT>PLZ .1CEN LK 9POS
PCB, RF35, 2.5 X 3.0 X 0.250
2-56 SOC HD SCREW 1/4 SS
#2 SPLIT LOCKWASHER SS
CGHV50200F
-
-
-
Q1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV50200F Rev 1.1
CGHV50200F Power Dissipation De-rating Curve
180
160
140
120
100
80
Note 1
60
40
20
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
CDM
2 (125 V to 250 V)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV50200F Rev 1.1
Product Dimensions CGHV50200F (Package Type — 440215)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGHV50200F Rev 1.1
Part Number System
CGHV50200F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
5.0
200
GHz
W
-
Flange
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
13
CGHV50200F Rev 1.1
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV50200F
GaN HEMT
Each
CGHV50200F-TB
Test board without GaN HEMT
Each
CGHV50200F-AMP
Test board with GaN HEMT installed
Each
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
14
CGHV50200F Rev 1.1
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
15
CGHV50200F Rev 1.1
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