CGHV40180F_技术文档

CGHV40180F

180 W, DC - 2000 MHz, 50 V, GaN HEMT

Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efﬁciency, high gain and

wide bandwidth capabilities making the CGHV40180F ideal for linear

and compressed ampliﬁer circuits. The transistor is available in a 2-lead

ﬂange package.

Typical Performance Over 800 MHz - 1000 MHz (T_C= 25˚C), 50 V

Parameter

800 MHz

850 MHz

900 MHz

950 MHz

1000 MHz

Units

Small Signal Gain

25.6

25.2

24.9

24.4

24.3

dB

Gain @ Pin 34 dBm

Output Power @ Pin 34 dBm

EFF @ Pin 34 dBm

Note:

20.4

275

67

20.8

302

75

20.3

279

73

20.1

257

73

20.1

257

71

dB

W

%

Measured CW in the CGHV40180F-AMP Application circuit.

FEATURES

APPLICATIONS

•

Up to 2000 MHz Operation

•

Military Communications

24 dB Small Signal Gain at 900 MHz

20 dB Power Gain at 900 MHz

250 W Typical Output Power at 900 MHz

75 % Efﬁciency at P_SAT

Public Safety VHF-UHF applications

Radar

Medical

Broadband Ampliﬁers

Subject to change without notice.

www.cree.com/rf

1

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

V_DSS

Rating

125

Units

Volts

˚C

Conditions

25˚C

Drain-Source Voltage

Gate-to-Source Voltage

V_GS

-10, +2

-65, +150

225

25˚C

Storage Temperature

T_STG

Operating Junction Temperature¹

Maximum Forward Gate Current

Maximum Drain Current¹

Soldering Temperature²

Screw Torque

T

˚C

J

I_GMAX

I_DMAX

T_S

42

mA

A

25˚C

12.1

245

˚C

40

in-oz

˚C/W

W

τ

CGHV40180F Thermal Resistance, Junction to Case

Maximum dissipated power

R_θJC

0.95

150

P_DISS= 150, 85˚C

Case Operating Temperature³

T_C

-40, +150

˚C

Note:

¹Current limit for long term, reliable operation

²Refer to the Application Note on soldering at www.cree.com/RF/Document-Library

³See also, Power Derating Curve on Page 5.

Electrical Characteristics

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹(T_C= 25˚C)

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.7

37.6

–

-2.3

–

V_DC

A

V_DS= 10 V, I_D= 20.8 mA

V_DS= 50 V, I_D= 1000 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 41.8 mA

Gate Quiescent Voltage

Saturated Drain Current²

Drain-Source Breakdown Voltage

31.4

150

–

V_BR

–

V_DC

RF Characteristics^2,3(T_C= 25˚C, F₀= 900 MHz unless otherwise noted)

Small Signal Gain

Power Gain

G_SS

G_P

23.4

19.3

24.0

20.3

–

dB

V_DD= 50 V, I_DQ= 1.0 A, P_in=10dBm CW

V_DD= 50 V, I_DQ= 1.0 A, P_in=34 dBm CW

Power Output at Saturation

P_OUT

53.7

64

54.3

74

–

dBm

%

V_DD= 50 V, I_DQ= 1.0 A, P_in=34 dBm CW

Drain Efﬁciency⁴

η

No damage at all phase angles,

V_DD= 50 V, I_DQ= 1.0 A, P_OUT= 180 W CW

Y

Output Mismatch Stress

VSWR

–

3 : 1

Dynamic Characteristics

Input Capacitance

C_GS

C_DS

C_GD

–

57.8

13.7

1.23

–

pF

V_DS= 50 V, V_gs= -8 V, f = 1 MHz

Output Capacitance

Feedback Capacitance

Notes:

¹Measured on wafer prior to packaging.

²Scaled from PCM data.

³Measurements are to be performed using Cree production test ﬁxture AD-838292F-TB

⁴Drain Efﬁciency = P_OUT/PDC

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

2

CGHV40180F Rev 1.3

www.cree.com/rf

CGHV40180F Typical Performance

Figure 1. - Small Signal Gain and Return Loss versus Frequency

measured in application circuit CGHV40180F

V_DD= 50 V, I_DQ= 1.0 A

Figure 2. - Output Power and Drain Efﬁciency vs Frequency

CGHV40180F-TB

CW Operation, V_DD= 50 V, I_DQ= 1.0 A, @ P_IN34 dBm

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

3

CGHV40180F Rev 1.3

www.cree.com/rf

CGHV40180F Typical Performance

Figure 3. - Gain and Drain EFF vs. Frequency and Output Power

CGHV40180F-TB

CW Operation, V_DD= 50 V, I_DQ= 1.0A

Figure 4. - Simulated Maximum Available Gain and K-factor of the CGHV40180F

V_DD= 50 V, I_DQ= 1.0 A

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

4

CGHV40180F Rev 1.3

www.cree.com/rf

CGHV40180F Power Dissipation De-rating Curve

Figure 5. - Transient Power Dissipation De-rating Curve

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

5

CGHV40180F Rev 1.3

www.cree.com/rf

CGHV40180F-AMP Application Circuit Schematic

CGHV40180F-AMP Application Circuit

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

6

CGHV40180F Rev 1.3

www.cree.com/rf

CGHV40180F-AMP Application Circuit Bill of Materials

Designator

Description

RES, 1/16W, 0603, 1%, 10.0 OHMS

Qty

R11

R10

1

2

1

2

1

2

1

RES, 1/16W, 0603, 1%, 511 OHMS

CAP, 33UF, 20%, G CASE

C29

C28

CAP 1.0UF, 100V, ±10%, X7R, 1210

CAP, 510pF, NPO, 5%, 100V, 0603

CAP, 470pF, NPO, 5%, 250V, ATC800B

CAP, 10UF, 16V TANTALUM, 2312

CAP, 12.0pF, ±5%, 0603, ATC600S

CAP, 27pF, ±5%, 0603, ATC600S

C17

C26

C19

C14, C15

C1, C16

C10

CAP, 4.7pF, ±0.1pF, 0603, ATC600S

CAP, 6.8pF, ±0.25pF, 0603, ATC600S

CAP, 8.2pF, ±0.25 pF, 0603, ATC600S

CAP, 33000pF, 0805, 100V, X7R

C11

C12, C13

C18, C27

C20

CAP, 10pF, ±1%, 250V, 0805, ATC600F

CAP, 20pF, ±5%, 250V, 0805, ATC600F

CAP, 27pF, ±5%, 250V, 0805, ATC600F

CAP, 3.0pF, ±0.1pF, 250V, 0805, ATC600F

CAP, 6.2pF, ±0.1pF, 250V, 0805, ATC600F

CAP, 8.2pF, ±0.1pF, 250V, 0805 ATC600F

C25

C24

C23

C22

C21

-

PCB ROGERS HTC6035, 0.020 THK, ER 3.60

1

J1,J2

J3

CONN, SMA, PANEL MOUNT JACK, FLANGE, 4 HOLE BLUNT POST

HEADER RT>PLZ .1CEN LK 9POS

2

1

L10

Q1

INDUCTOR, CHIP, 6.8nH, 5%, 0603 SMT, DIGIKEY 712-1432-1-ND

CGHV40180

CGHV40180F-AMP Demonstration Ampliﬁer Circuit

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

7

CGHV40180F Rev 1.3

www.cree.com/rf

Source and Load Impedances

D

Z Source

Z Load

G

S

Frequency (MHz)

Z Source

Z Load

50

150

250

500

750

1000

23.7 + J25.9

7.4 + J8.3

4.2 +J7.9

1.4 + J1.5

1.0 + J0.0

0.7 + J1.1

7.6 + J0.6

8.1 + J0.7

7.9 + J2.2

4.7 + J2.7

3.9 + J2.3

4.0 + J1.8

Note 1. V_DD= 50 V, I_DQ= 1.0A in the 440223 package.

Note 2. Optimized for Power Gain, P_SATand Drain Efﬁciency

Note 3. When using this device at low frequency, series resistor should be used to maintain ampliﬁer stability

Electrostatic Discharge (ESD) Classiﬁcations

Parameter

Symbol

HBM

Class

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Human Body Model

Charge Device Model

1A (> 250 V)

CDM

2 (125 V to 250 V)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

8

CGHV40180F Rev 1.3

www.cree.com/rf

Product Dimensions CGHV40180F (Package Type — 440223)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

9

CGHV40180F Rev 1.3

www.cree.com/rf

Part Number System

CGHV40180F

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

Parameter

Value

Units

Upper Frequency¹

Power Output

Package

4.0

100

GHz

W

Flange

-

Table 1.

Note¹: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code

Code Value

A

B

C

D

E

0

1

2

3

4

5

6

7

8

9

F

G

H

J

K

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Table 2.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

10

CGHV40180F Rev 1.3

www.cree.com/rf

Product Ordering Information

Order Number

Description

Unit of Measure

Image

CGHV40180F

GaN HEMT

Each

CGHV40180F-TB

Test board without GaN HEMT

Each

Test board with GaN HEMT (ﬂanged)

installed

CGHV40180F-AMP

Each

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

11

CGHV40180F Rev 1.3

www.cree.com/rf

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/RF

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

registered trademarks of Cree, Inc.

Fax: +1.919.869.2733

12

CGHV40180F Rev 1.3

www.cree.com/rf


型号：	CGHV40180F
厂家：	CREE, INC
描述：	180 W, DC - 2000 MHz, 50 V, GaN HEMT
文件：	总12页 (文件大小：1324K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CGHV40180F [CREE]

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