CGHV40320D [CREE]
320 W, 4.0 GHz, GaN HEMT Die;
| 型号： | CGHV40320D |
| 厂家： | 
CREE, INC |
| 描述： | 320 W, 4.0 GHz, GaN HEMT Die |
| 文件： | 总7页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV40320D
320 W, 4.0 GHz, GaN HEMT Die
Cree’s CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
APPLICATIONS
•ꢀ 19 dB Typical Small Signal Gain at 4 GHz
•ꢀ Broadbandꢀamplifiers
•ꢀ 65% TypicalꢀPowerꢀAddedꢀEfficiencyꢀ
•ꢀ 320 W Typical PSAT
•ꢀ Tactical communications
•ꢀ Satellite communications
•ꢀ Industrial,ꢀScientific,ꢀandꢀMedicalꢀampli-
fiers
•ꢀ 50 V Operation
•ꢀ High Breakdown Voltage
•ꢀ Up to 4 GHz Operation
•ꢀ ClassꢀAB,ꢀLinearꢀamplifiersꢀsuitableꢀforꢀ
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
•ꢀ Bare die are shipped on tape or in Gel-Pak® containers.
•ꢀ Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
VDSS
VGS
Rating
150
Units
VDC
Conditions
25˚C
Drain-source Voltage
Gate-source Voltage
-10, +2
-65, +150
225
VDC
25˚C
Storage Temperature
TSTG
TJ
˚C
Operating Junction Temperature
Maximum Drain Current1
˚C
IMAX
IGMAX
RθJC
12
A
25˚C
25˚C
Maximum Forward Gate Current
Thermal Resistance, Junction to Case (packaged)2
Thermal Resistance, Junction to Case (die only)
Mounting Temperature
41.8
mA
˚C/W
˚C/W
˚C
0.44
85˚C,ꢀ167.2WꢀDissipation
85˚C,ꢀ167.2WꢀDissipation
30 seconds
RθJC
0.35
TS
320
Note1 Current limit for long term reliable operation.
Note2 Eutecticꢀdieꢀattachꢀusingꢀ80/20ꢀAuSnꢀmountedꢀtoꢀaꢀ10ꢀmilꢀthickꢀCu15Mo85ꢀcarrier.
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Pinch-Off Voltage
Drain Current1
VP
IDSS
VBD
-3.8
33
150
–
-3.0
41.8
–
–2.3
V
A
V
Ω
V
VDS = 10 V, ID = 41.8 mA
VDS = 6 V, VGS = 2.0 V
VGS = -8 V, ID = 41.8 mA
VDS = 0.1 V
–
–
–
–
Drain-Source Breakdown Voltage
On Resistance
RON
VG-ON
0.07
1.9
Gate Forward Voltage
RF Characteristics
Small Signal Gain
–
IGS = 41.8 mA
GSS
PSAT
η
–
–
–
19
320
65
–
–
–
dB
W
VDD = 50 V, IDQ = 500 mA
Saturated Power Output2
VDD = 50 V, IDQ = 500 mA
DrainꢀEfficiency3
%
VDD = 50 V, IDQ = 500 mA, PSAT = 320 W
VDD = 50 V, IDQ = 500 mA,
POUT = 320 W PEP
Intermodulation Distortion
Output Mismatch Stress
IM3
–
–
-30
–
–
dBc
No damage at all phase angles,
VDD = 50 V, IDQ = 500 mA,
POUT = 320 W Pulsed
Y
VSWR
10 : 1
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
55.6
11.56
1.23
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
Notes:
Scaled from PCM data
PSATꢀisꢀdefinedꢀasꢀIG = 4.0 mA.
3DrainꢀEfficiencyꢀ=ꢀPOUT /ꢀPDC
1
2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
2
CGHV40320D Rev 0.0
DIE Dimensions (units in microns)
Overallꢀdieꢀsizeꢀ6100ꢀxꢀ1110ꢀ(+0/-50)ꢀmicrons,ꢀdieꢀthicknessꢀ100ꢀmicrons.
All Gate and Drain pads must be wire bonded for electrical connection.
Assembly Notes:
•ꢀ RecommendedꢀsolderꢀisꢀAuSnꢀ(80/20)ꢀsolder.ꢀReferꢀtoꢀCree’sꢀwebsiteꢀforꢀtheꢀEutecticꢀDieꢀBondꢀProcedureꢀ
applicationꢀnoteꢀatꢀwww.cree.com/wireless.
•ꢀ Vacuum collet is the preferred method of pick-up.
•ꢀ The backside of the die is the Source (ground) contact.
•ꢀ Die back side gold plating is 5 microns thick minimum.
•ꢀ Thermosonic ball or wedge bonding are the preferred connection methods.
•ꢀ Gold wire must be used for connections.
•ꢀ Use the die label (XX-YY) for correct orientation.
Cree, Inc.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
3
CGHV40320D Rev 0.0
Typical Performance
Figure 1. – CGHV40320D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25°C
VDD = 50V, IDQ = 500 mA, Frequency = 2.7 GHz
Figure 2. – CGHV40320D GMAX and K Factor vs. Frequency at Tcase = 25°C
VDD = 50V, IDQ = 500 mA
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
4
CGHV40320D Rev 0.0
Typical Die S-Parameters (Small Signal, VDS = 50 V, IDQ = 500 mA, magnitude / angle)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
0.5
0.6
0.7
0.8
0.9
1
0.964
0.966
0.967
0.969
0.970
0.972
0.973
0.974
0.976
0.977
0.978
0.979
0.980
0.981
0.982
0.983
0.984
0.985
0.985
0.986
0.987
0.987
0.988
0.988
0.989
0.989
0.990
0.990
0.991
0.991
0.992
0.992
0.992
0.993
0.993
0.993
0.993
0.993
0.994
0.994
0.994
-175.19
-175.83
-176.28
-176.62
-176.88
-177.10
-177.28
-177.44
-177.59
-177.71
-177.83
-177.95
-178.05
-178.15
-178.24
-178.33
-178.42
-178.50
-178.58
-178.65
-178.73
-178.80
-178.86
-178.93
-178.99
-179.05
-179.17
-179.28
-179.39
-179.49
-179.58
-179.68
-179.76
-179.85
-179.93
179.99
5.49
4.48
3.75
3.20
2.77
2.42
2.14
1.90
1.70
1.53
1.38
1.25
1.14
1.04
0.96
0.88
0.81
0.75
0.70
0.65
0.61
0.57
0.53
0.50
0.47
0.44
0.39
0.35
0.32
0.29
0.26
0.24
0.22
0.20
0.19
0.17
0.16
0.15
0.14
0.13
0.12
73.16
69.32
65.72
62.34
59.16
56.17
53.35
50.70
48.21
45.87
43.66
41.59
39.65
37.81
36.08
34.45
32.90
31.44
30.06
28.75
27.50
26.32
25.19
24.11
23.08
22.10
20.26
18.56
16.99
15.54
14.18
12.90
11.71
10.58
9.51
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.004
0.004
0.004
0.003
0.003
0.003
0.003
0.003
0.003
0.003
0.003
0.003
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
-15.49
-19.04
-22.35
-25.45
-28.35
-31.06
-33.59
-35.96
-38.16
-40.22
-42.13
-43.91
-45.56
-47.11
-48.54
-49.88
-51.12
-52.28
-53.36
-54.37
-55.30
-56.17
-56.99
-57.74
-58.45
-59.10
-60.28
-61.29
-62.15
-62.87
-63.47
-63.94
-64.30
-64.55
-64.68
-64.70
-64.59
-64.35
-63.96
-63.41
-62.68
0.719
0.732
0.746
0.761
0.776
0.790
0.804
0.817
0.829
0.841
0.852
0.862
0.871
0.879
0.887
0.895
0.901
0.907
0.913
0.918
0.923
0.927
0.931
0.935
0.938
0.942
0.947
0.952
0.957
0.960
0.964
0.967
0.969
0.971
0.973
0.975
0.977
0.978
0.980
0.981
0.982
-171.16
-170.45
-169.86
-169.41
-169.08
-168.88
-168.78
-168.76
-168.81
-168.91
-169.06
-169.24
-169.44
-169.66
-169.89
-170.12
-170.36
-170.61
-170.85
-171.08
-171.32
-171.55
-171.77
-171.99
-172.20
-172.41
-172.80
-173.17
-173.52
-173.84
-174.15
-174.43
-174.70
-174.96
-175.20
-175.42
-175.64
-175.84
-176.03
-176.22
-176.39
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.2
3.4
3.6
3.8
4
4.2
4.4
4.6
4.8
5
8.50
5.2
5.4
5.6
5.8
6
179.92
7.54
179.84
6.62
179.77
5.75
179.70
4.91
179.63
4.10
To download the s-parameters in s2p format, go to the CGHV40320D Product Page and click the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
5
CGHV40320D Rev 0.0
Part Number System
CGHV40320D
Die
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
4.0
320
GHz
W
Bare Die
-
Table 1.
Note1: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
G
H
J
K
1A = 10.0 GHz
2Hꢀ=ꢀ27.0ꢀGHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
www.cree.com/rf
6
CGHV40320D Rev 0.0
Disclaimer
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCree,ꢀInc.ꢀbelievesꢀtheꢀinformationꢀcontainedꢀwithinꢀthisꢀdataꢀsheetꢀ
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
resultꢀinꢀpersonalꢀinjuryꢀorꢀdeath,ꢀorꢀinꢀapplicationsꢀforꢀtheꢀplanning,ꢀconstruction,ꢀmaintenanceꢀorꢀdirectꢀoperationꢀofꢀaꢀ
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham,ꢀNCꢀ27703
www.cree.com/rf
Sarah Miller
Cree, Marketing & Export, RF Components
1.919.407.5302
Ryan Baker
Cree, Marketing, RF Components
1.919.407.7816
Tom Dekker
Cree, Sales Director, RF Components
1.919.407.5639
Cree, Inc.
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
7
CGHV40320D Rev 0.0
相关型号：
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