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BDY55 [COMSET]

NPN SILICON TRANSISTORS, DIFFUSED MESA; NPN硅晶体管， DIFFUSED MESA
BDY55
型号： BDY55
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

NPN SILICON TRANSISTORS, DIFFUSED MESA
NPN硅晶体管， DIFFUSED MESA

晶体 晶体管
文件： 总3页 (文件大小：130K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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NPN SILICON TRANSISTORS, DIFFUSED MESA  
LF Large Signal Power Amplification  
High Current Fast Switching.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BDY55  
BDY56  
BDY55  
BDY56  
60  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCEO  
V
120  
100  
150  
VCBO  
V
BDY55  
BDY56  
Emitter-Base Voltage  
Collector Current  
Base Current  
VEBO  
IC  
7
15  
7
V
A
A
BDY55  
BDY56  
BDY55  
BDY56  
IB  
BDY55  
BDY56  
Power Dissipation  
@ TC = 25°  
PTOT  
117  
Watts  
°C  
BDY55  
BDY56  
Junction Temperature  
Storage Temperature  
TJ  
TS  
200  
BDY55  
BDY56  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
BDY55  
BDY56  
Thermal Resistance, Junction to Case  
RthJ-C  
1.5  
°C/W  
Page 1 of 3  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
BDY55  
Symbol  
VCEO(SUS)  
Ratings  
Min Typ Mx Unit  
Collector-Emitter  
Breakdown Voltage (*)  
60  
-
-
-
-
IC = 200 mA, IB = 0  
V
BDY56  
120  
VCE = 30 V  
VCE = 60 V  
BDY55  
BDY56  
BDY55  
BDY56  
-
-
-
-
-
-
-
-
-
-
0.7  
0.5  
5
Collector-Emitter Cutoff  
Current  
mA  
mA  
ICEO  
VEB = 7 V  
Emitter-Base Cutoff Current  
IEBO  
3
VCE = 100 V  
5
VBE = -1.5 V  
BDY55  
BDY56  
VCE = 100 V  
VBE = -1.5 V  
TCASE = 150°C  
VCE = 150 V  
-
-
-
-
-
-
30  
3
Collector-Emitter Cutoff  
Current  
mA  
ICEX  
VBE = -1.5 V  
VCE = 150 V  
VBE = -1.5 V  
30  
T
CASE = 150°C  
BDY55  
BDY56  
IC = 4.0 A, IB = 0.4 A  
-
-
1.1  
Collector-Emitter saturation  
Voltage (*)  
V
VCE(SAT)  
BDY55  
BDY56  
BDY55  
BDY56  
BDY55  
BDY56  
BDY55  
BDY56  
BDY55  
BDY56  
BDY55  
BDY56  
BDY55  
BDY56  
IC = 10 A, IB = 3.3 A  
IC = 10 A, IB = 3.3 A  
-
-
-
-
-
-
2.5  
2.5  
1.8  
70  
Collector-Emitter saturation  
Voltage (*)  
VCE(SAT)  
VBE  
IC = 4.0 A, VCE = 4.0 V  
VCE = 4 V, IC = 4 A  
VCE = 4 V, IC =10 A  
Base-Emitter Voltage (*)  
-
V
V
20  
10  
10  
-
Static Forward Current  
transfer ratio (*)  
HFE  
VCE = 4.0 V, IC = 1.0 A,  
f = 10 MHz  
Transition Frequency  
Turn-on time  
-
-
-
MHz  
fT  
IC = 5 A, IB = 1 A  
IC = 5 A,  
0.5  
td + tr  
µs  
BDY55  
BDY56  
I
B1 = 1 A,  
Turn-off time  
-
-
2
ts + tf  
µs  
IB2 = -0.5 A  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
Page 2 of 3  
MECHANICAL DATA CASE TO-3  
DIMENSIONS (mm)  
min  
typ  
max  
A
B
C
D
F
11  
-
-
-
-
-
-
-
-
-
-
-
13.10  
1.15  
1.65  
8.92  
20  
0.97  
1.5  
8.32  
19  
G
N
P
R
U
V
10.70  
16.50  
25  
11.1  
17.20  
26  
4
4.09  
39.30  
30.30  
38.50  
30  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Page 3 of 3  

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