首页 |元器件品牌

BDX64A [COMSET]

PNP SILICON DARLINGTONS; PNP硅DARLINGTONS
BDX64A
型号： BDX64A
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

PNP SILICON DARLINGTONS
PNP硅DARLINGTONS

晶体 晶体管 局域网
文件： 总4页 (文件大小：147K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PNP SILICON DARLINGTONS  
General purpose darlingtons designed for power amplifier and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BDX64  
-60  
-80  
-100  
-120  
-60  
BDX64A  
BDX64B  
BDX64C  
BDX64  
Collector-Emitter Voltage  
VCEO  
V
BDX64A  
BDX64B  
BDX64C  
-80  
-100  
-120  
Collector-EmitterVoltage  
Emitter-Base Voltage  
VBE=-1.5 V  
VCEV  
V
V
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
VEBO  
-5.0  
-12  
IC(RMS)  
Collector Current  
IC  
A
BDX64A  
BDX64B  
BDX64C  
-16  
ICM  
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
Base Current  
0.2  
IB  
A
Watts  
W/°C  
BDX64A  
BDX64B  
BDX64C  
Power Dissipation  
@ TC = 25°  
PT  
117  
BDX64  
Junction Temperature  
Storage Temperature  
TJ  
TS  
BDX64A  
BDX64B  
BDX64C  
-55 to +200  
°C  
Page 1 of 4  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
BDX64  
BDX64A  
BDX64B  
BDX64C  
Thermal Resistance, Junction to Case  
RthJ-C  
1.5  
°C/W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
Ratings  
Min Typ Mx Unit  
BDX64  
-60  
-
-
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage (*)  
BDX64A -80  
BDX64B -100  
BDX64C -120  
IC=-0.1 A, IB=0, L=25mH  
V
VCEO(SUS)  
VCE=-30 V  
VCE=-40 V  
VCE=-50 V  
VCE=-60 V  
BDX64  
-
-
-
-
-
-
-
-
Collector Cutoff Current  
Emitter Cutoff Current  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
-1.0  
mA  
mA  
ICEO  
VBE=-5 V  
-
-
-5.0  
IEBO  
VCBO=-60 V  
VCBO=-40 V  
TCASE=200°C  
VCBO=-80 V  
VCBO=-50 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2  
2
BDX64  
0.2  
2
BDX64A  
BDX64B  
BDX64C  
Collector-Base Cutoff  
Current  
T
CASE=200°C  
-
ICBO  
VCBO=-100 V  
VCBO=-60 V  
0.2  
2
T
CASE=200°C  
VCBO=-120 V  
0.2  
2
VCBO=-70 V  
TCASE=200°  
-
BDX64  
Collector-Emitter saturation  
Voltage (*)  
BDX64A  
BDX64B  
BDX64C  
BDX64  
IC=-5.0 A, IB=-20 mA  
-
-
-
-2  
-
V
V
VCE(SAT)  
Forward Voltage (pulse  
method)  
BDX64A  
BDX64B  
BDX64C  
IF=5 A  
1.8  
VF  
Page 2 of 4  
BDX64  
Base-Emitter Voltage (*)  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
BDX64  
BDX64A  
BDX64B  
BDX64C  
IC=-5.0 A, VCE=-3V  
-VCE=3 V,-IC=5 A  
-
-
80  
7
-2.5  
V
VBE  
Fhfe  
fT  
-
Cut-off frequency  
-
-
-
-
-
kHz  
MHz  
VCE=-3 V, IC=-5 A, f=1 MHz  
-VCE=-3 V, -IC=-1 A  
-VCE=-3 V, -IC=-5 A  
-VCE=-3 V, -IC=-12 A  
-
Transition Frequency  
-
1000  
-
1500  
-
D.C. current gain (*)  
-
hFE  
750  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
(1) collector-Emitter voltage limited et VCEci = V  
rated by  
an auxiliary circuit  
MECHANICAL DATA CASE TO-3  
DIMENSIONS  
mm  
inches  
1,004  
1,53  
1,18  
0,68  
0,43  
0,46  
0,34  
0,6  
A
B
C
D
E
G
H
L
25,51  
38,93  
30,12  
17,25  
10,89  
11,62  
8,54  
1,55  
19,47  
1
M
N
P
0,77  
0,04  
0,16  
4,06  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Page 3 of 4  
Page 4 of 4  

相关型号：

BDX64B

 PNP SILICON DARLINGTONS
COMSET

BDX64B

 Bipolar PNP Device in a Hermetically sealed TO3
SEME-LAB

BDX64B

 isc Silicon PNP Darlington Power Transistor
ISC

BDX64C

 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
SEME-LAB

BDX64C

 PNP SILICON DARLINGTONS
COMSET

BDX64C

 Silicon PNP Power Transistors
SAVANTIC

BDX64C

 Silicon PNP Power Transistors
ISC

BDX64_12

 PNP SILICON DARLINGTON POWER TRANSISTOR
COMSET

BDX65

 Bipolar NPN Device
SEME-LAB

BDX65

 Silicon NPN Power Transistors
SAVANTIC

BDX65

 isc Silicon NPN Darlington Power Transistor
ISC

BDX65

 NPN SILICON DARLINGTONS
COMSET
©2020 ICPDF网 联系我们和版权申明