BDX18 [COMSET]
PNP SILICON TRANSISTOR EPITAXIAL BASE; PNP硅晶体管外延基地
| 型号： | BDX18 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | PNP SILICON TRANSISTOR EPITAXIAL BASE |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Suitable for :
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDX18
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
-60
V
BDX18N
-70
-65
BDX18
VCER
VEBO
VCBO
VCEX
RBE=100Ω
V
V
V
V
BDX18N
BDX18
-7
BDX18N
-100
-70
-90
-70
BDX18
BDX18N
BDX18
Collector-Emitter Voltage
VBE=+1.5 V
@ TC = 25°
BDX18N
BDX18
Collector Current
Base Current
-15
-7
IC
IB
A
A
BDX18N
BDX18
BDX18N
BDX18
Power Dissipation
PT
117
Watts
°C
BDX18N
Junction Temperature
Storage Temperature
TJ
TS
BDX18
-65 to +200
BDX18N
COMSET SEMICONDUCTORS
1/3
BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
Thermal Resistance, Junction to Case
RthJ-C
1.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(SUS)
Ratings
Min Typ Mx Unit
Collector-Emitter
BDX18
-60
IC=200 mA, IB=0
-
-
V
Breakdown Voltage (*)
BDX18N
-60
-90
-70
-70
BDX18
-
-
-
-
-
-
-
Collector-Emitter
IC=-100 mA, VBE=1.5 V
V
VCEX(SUS)
Breakdown Voltage (*)
BDX18N
BDX18
Collector-Emitter
IC=-200 mA, RBE=100 Ω
V
VCER(SUS)
Breakdown Voltage (*)
BDX18N
-65
-
-
-
VCE=-90 V, VBE=1.5 V
VCE=-60 V, VBE=1.5 V
-5
-10
-5
BDX18
Collector-Emitter Cutoff
Current
T
CASE=150°C
mA
ICEX
VCE=-70 V, VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
-
-
-
-
BDX18N
-10
BDX18
VEB=-7 V
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
-
-
-
-
-
-
-5
mA
V
IEBO
BDX18N
BDX18
IC=-4.0 A, VCE=-4.0V
IC=-4.0 A, IB=-0.4V
-1.8
-1.1
VBE
BDX18N
Collector-Emitter Saturation
Voltage
BDX18
V
VCE(SAT)
BDX18N
BDX18
IC =-1A, VCE=-10 V, f=1
MHz
-
Transition Frequency
4
-
MHz
fT
BDX18N
COMSET SEMICONDUCTORS
2/3
BDX18 – BDX18N
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
Static Forward Current
Transfer Ratio (*)
BDX18
BDX18N
VCE=-4.0 V, IC=-4.0 A
20
-
70
-
h21E
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
COMSET SEMICONDUCTORS
3/3
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