CHM3172JPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM3172JPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM3172JPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 8.9 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
(
)
4.06 0.160
* Super High density cell design for extremely low RDS(ON).
* High saturation current capability.
(
)
3.70 0.146
8
5
(
)
.51 0.020
1
4
(0.012)
.10
(
)
5.00 0.197
CONSTRUCTION
(
)
4.69 0.185
( )BSC
1.27 0.05
* N-Channel Enhancement
(0.069)
1.75
(
)
.25 0.010
(
)
1.35 0.053
(0.007)
.17
(
)
.25 0.010
(0.002)
.05
(
)
6.20 0.244
D
S
D
S
D
D
G
(
)
5.80 0.228
8
1
5
4
CIRCUIT
Dimensions in millimeters
SO-8
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM3172JPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
8.9
30
ID
A
(Note 3)
PD
TJ
2500
mW
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2006-01
RATING CHARACTERISTIC CURVES ( CHM3172JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
30
DSS
I
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
1
VGS(th)
3
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
16
22
20
28
V
V
GS=10V, I
D
=6.3A
=5.0A
RDS(ON)
mΩ
Static Drain-Source On-Resistance
GS=4.5V, I
D
Dynamic Characteristics
Ciss
1080
220
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
pF
140
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
10.4
3.5
3.8
16
13
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=15V, I
GS=5V
D
=6A
nC
nS
Qgs
gd
Q
ton
tr
Turn-On Time
Rise Time
30
20
60
20
VDD
15V
=
9
,
D
I = 1.0A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
31
Ω
GEN= 6
R
10
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
2.3
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 2.3A
GS
(Note 2)
VSD
1.2
V
V
= 0 V
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