CHM3301JPT [CHENMKO]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CHM3301JPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：455K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM3301JPT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 7.0 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
(
)
4.06 0.160
* Super high dense cell design for extremely low RDS(ON).
(
)
3.70 0.146
* High power and current handing capability.
* Lead free product is acquired.
8
5
(
)
.51 0.020
1
4
(0.012)
.10
(
)
5.00 0.197
CONSTRUCTION
(
)
4.69 0.185
( )BSC
1.27 0.05
* P-Channel Enhancement
MARKING
(0.069)
1.75
(
)
* 3301
.25 0.010
(
)
1.35 0.053
(0.007)
.17
(
)
.25 0.010
(0.002)
.05
(
)
6.20 0.244
D
S
D
S
D
D
G
(
)
5.80 0.228
8
1
5
4
CIRCUIT
Dimensions in millimeters
SO-8
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM3301JPT
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-30
V
±20
V
Maximum Drain Current - Continuous
- Pulsed
-7.0
-25
ID
A
(Note 3)
PD
TJ
2500
mW
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2006-12
RATING CHARACTERISTIC CURVES ( CHM3301JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= -250 µA
-30
DSS
I
Zero Gate Voltage Drain Current
VDS = -30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
-1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
-1
-3
V
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
26
32
50
V
V
GS=-10V, I
D
=-6.0A
=-4.0A
RDS(ON)
m
Ω
Static Drain-Source On-Resistance
Forward Transconductance
GS=-4.5V, I
D
38
5
gFS
S
VDS = -10V , ID = -6.0A
SWITCHING CHARACTERISTICS (Note 4)
19
4
25
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=-15V, I
GS=-10V
D
=-6.0A
nC
nS
Qgs
gd
Q
2.5
13
6
ton
tr
Turn-On Time
Rise Time
25
15
VDD
-15V
=
,
D
I = -1.0A
GS
V
= -10 V
toff
tf
Turn-Off Time
Fall Time
58
115
45
Ω
GEN= 6
R
22
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
-7.0
-1.2
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = -1.0A
GS
(Note 2)
VSD
V
V
= 0 V
RATING CHARACTERISTIC CURVES ( CHM3301JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
50
40
GS=
V
10V
8.0V
8
6
6.0V
5.0V
GS=
V
30
20
10
0
GS=
V
4
2
0
J=-55°C
T
J=125°C
T
4.0V
GS=
V
J=25°C
T
3.0V
GS=
V
0
6.0
3.0
4.0
5.0
0
6.0
2.0
4.0
1.0
2.0
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
10
2.2
1.9
VDS=-15V
ID=-6A
VGS=-10V
ID=-6.0A
8
1.6
6
4
2
1.3
1.0
0.7
0.4
0
0
5
10
15
20
-100
-50
0
50
100
150
200
Qg , TOTAL GATE CHARGE (nC)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
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