CHM3413SPT [CHENMKO]

P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管


型号：	CHM3413SPT
厂家：	CHENMKO ENTERPRISE CO. LTD.
描述：	P-Channel Enhancement Mode Field Effect Transistor P沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总2页 (文件大小：190K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHENMKO ENTERPRISE CO.,LTD

CHM3413SPT

SURFACE MOUNT

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 3.5 Ampere

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

SC-88/SOT-363

FEATURE

* Small flat package. (SC-88 )

* High density cell design for extremely low RDS(ON).

* Rugged and reliable.

(6)

(1)

* High saturation current capability.

0.65

1.2~1.4

2.0~2.2

CONSTRUCTION

(3)

(4)

* P-Channel Enhancement

0.15~0.35

1.15~1.35

MARKING

* 3413

0.08~0.15

0.8~1.1

0~0.1

0.1 Min.

2.15~2.45

CIRCUIT

SC-88/SOT-363

Dimensions in millimeters

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

CHM3413SPT

Units

V_DSS

Drain-Source Voltage

-20

V_GSS

Gate-Source Voltage

±12

Maximum Drain Current - Continuous

- Pulsed

-3.5

-15

I_D

P_D

T_J

625

°C

Maximum Power Dissipation

Operating Temperature Range

-55 to 150

Storage Temperature Range

STG

°C

Thermal characteristics

(Note 1)

θJA

Thermal Resistance, Junction-to-Ambient

250

°C/W

2007-10

RATING CHARACTERISTIC CURVES ( CHM3413SPT )

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

Drain-Source Breakdown Voltage

V_GS

= 0 V, I

= -250 µA

-20

DSS

Zero Gate Voltage Drain Current

V_DS= -20 V, V_GS= 0 V

V_GS= 12V,V_DS= 0 V

V_GS= -12V, V_DS= 0 V

-1

GSSF

+100

-100

Gate-Body Leakage

GSSR

(Note 2)

ON CHARACTERISTICS

V_GS(th)

-0.36

-0.8

Gate Threshold Voltage

V_DS= V_GS, I_D= -250 µA

GS=-4.5V, I

GS=-2.5V, I

=-3.4A

=-2.4A

R_DS(ON)

Ω

Static Drain-Source On-Resistance

120

g_FS

Forward Transconductance

V_DS= -5V, I_D= -2.8A

SWITCHING CHARACTERISTICS ^{(Note 4)}

4.8

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_g

DS=-6V, I

=-2.8A

Q_gs

GS=-4.5V

t_on

t_r

Turn-On Time

Rise Time

V_DD

-6V

I = -1.0A

GEN

= -4.5 V

t_off

t_f

Turn-Off Time

Fall Time

Ω

R = 6

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

-1.5

-1.2

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

I = -1.5A

V_SD

= 0 V

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