CHM3178JPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM3178JPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总3页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM3178JPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 7.8 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
(
)
)
4.06 0.160
* Super high dense cell design for extremely low RDS(ON).
(
3.70 0.146
* High power and current handing capability.
* Lead free product is acquired.
8
(
)
.51 0.020
1
4
(0.012)
.10
(
)
5.00 0.197
CONSTRUCTION
(
)
4.69 0.185
( )BSC
1.27 0.05
* N-Channel Enhancement
5
(0.069)
1.75
(
)
.25 0.010
(
)
1.35 0.053
(0.007)
.17
(
)
.25 0.010
(0.002)
.05
(
)
6.20 0.244
D1 D1 D2 D2
(
)
5.80 0.228
8
1
5
CIRCUIT
Dimensions in millimeters
SO-8
4
S1 G1 S2
G2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM3178JPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
7.8
ID
A
(Note 3)
30
PD
TJ
2000
mW
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
2006-09
RATING CHARACTERISTIC CURVES ( CHM3178JPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
30
DSS
I
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
1
3
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
18
24
22
30
V
V
GS=10V, I
D
=6.3A
=5.0A
RDS(ON)
mΩ
Static Drain-Source On-Resistance
GS=4.5V, I
D
SWITCHING CHARACTERISTICS (Note 4)
10.4
3.5
3.8
16
13
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
DS=15V, I =6A
D
nC
nS
Qgs
V
GS=5V
gd
Q
ton
tr
Turn-On Time
Rise Time
30
20
60
20
VDD
15V
=
9
,
D
I = 1A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
31
Ω
R
GEN= 6
10
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
2.3
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 2.3A
GS
(Note 2)
VSD
1.2
V
V
= 0 V
RATING CHARACTERISTIC CURVES ( CHM3178JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
15
25
20
10,8,6,5V
GS=
V
12
4V
GS=
V
9
6
15
10
5
J=125°C
T
J=-55°C
T
3
J=25°C
T
3V
GS=
V
0
0
0
2.5
3.0
3.5
1.0
4.0
1.0
2.0
3.0
4.0
1.5
2.0
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
10
8
2.2
1.9
VDS=15V
ID=6A
VGS=10V
ID=6.3A
1.6
1.3
6
4
2
1.0
0.7
0.4
0
0
5
10
15
20
-100
-50
0
50
100
150
200
Qg , TOTAL GATE CHARGE (nC)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
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