CHM3252PAPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | CHM3252PAPT |
厂家: | CHENMKO ENTERPRISE CO. LTD. |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总3页 (文件大小:485K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM3252PAPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 25 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small package. (TO-252A)
.280 (7.10)
.238 (6.05)
* Super high dense cell design for extremely low RDS(ON).
.094 (2.40)
.087 (2.20)
.035 (0.89)
.220 (5.59)
.195 (4.95)
* High power and current handing capability.
.018 (0.45)
CONSTRUCTION
* N-Channel Enhancement
(1)
(3) (2)
.024 (0.61)
.016 (0.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
2 Source
3 Drain( Heat Sink )
D
(3)
CIRCUIT
(1)
G
Dimensions in inches and (millimeters)
TO-252A
(2)
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM3252PAPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
25
ID
A
(Note 3)
100
PD
TJ
31
W
°C
°C
Maximum Power Dissipation at Tc = 25°C
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2008-01
ELECTRICAL CHARACTERISTIC ( CHM3252PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
30
µ
DSS
A
I
Zero Gate Voltage Drain Current
Gate-Body Leakage
VDS = 30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
GSSF
I
+100
-100
n
n
A
A
GSSR
I
Gate-Body Leakage
(Note 2)
ON CHARACTERISTICS
VGS(th)
1
3
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
22
30
28
39
V
V
GS=10V, I
D
=7A
=3.5A
RDS(ON)
mΩ
Static Drain-Source On-Resistance
GS=4.5V, I
D
Dynamic Characteristics
610
Ciss
Coss
Crss
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
145
95
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
12.3
16
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=15V, I
GS=10V
D
=7A
nC
nS
Qgs
1.5
2.5
9
gd
Q
ton
tr
Turn-On Time
Rise Time
20
8
VDD
15V
=
3
,
D
I =7A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
24
4
50
10
Ω
GEN= 3
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
I
2.3
1.2
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 2.3A
GS
VSD
V
V
= 0 V
RATING CHARACTERISTIC CURVES ( CHM3252PAPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
40
80
60
40
GS=
V
10,9,8,7,6V
5.0V
GS=
V
30
20
J=25°C
T
4.0V
GS=
V
10
0
20
J=125°C
T
J=-55°C
T
3.0V
GS=
V
0
0
1.0
2.0
3.0
4.0
5.0
2.0
3.0
0
1.0
4.0
5.0
6.0
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Gate Charge
2.2
1.9
1.6
1.3
1.0
10
8
VGS=10V
VDS=15V
ID=7A
ID=7A
6
4
2
0.7
0.4
0
0
3
6
9
12
15
-100
-50
0
50
100
150
200
Qg , TOTAL GATE CHARGE (nC)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Threshold Variation with
Temperature
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
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