CEP6336 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | CEP6336 |
厂家: | CHINO-EXCEL TECHNOLOGY |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:414K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CEP6336/CEB6336
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V.
RDS(ON) = 50mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
60
V
V
Gate-Source Voltage
VGS
±20
28
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
A
ID
A
20
Drain Current-Pulsed a
IDM
112
50
A
Maximum Power Dissipation @ TC = 25 C
W
PD
- Derate above 25 C
0.4
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
3
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
Rev 1. 2010.Dec
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP6336/CEB6336
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 10A
1
3
V
Static Drain-Source
30
35
40
50
mΩ
mΩ
On-Resistance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
750
110
70
pF
pF
pF
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
16
5
32
10
76
12
29
ns
ns
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1Ω
Turn-Off Delay Time
Turn-Off Fall Time
38
6
ns
ns
Total Gate Charge
Qg
22.2
32
4.7
nC
nC
nC
VDS = 30V, ID = 5.3A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
28
A
V
VSD
VGS = 0V, IS = 28A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CEP6336/CEB6336
25
20
15
10
50
40
30
20
VGS=10,8,6,5V
VGS=4.0
V
25 C
5
0
10
TJ=125 C
1.5
-55 C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3
4.5
6
7.5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
ID=14A
VGS=10V
C
iss
C
oss
C
rss
0
6
12
18
24
30
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP6336/CEB6336
103
10
8
VDS=30V
ID=5.3A
RDS(ON)Limit
102
100us
1ms
6
101
10ms
DC
4
100
2
TA=25 C
TJ=150 C
Single Pulse
10-1
0
10-2
10-1
100
101
102
0
4
8
12
16
20
24
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
PDM
t1
t2
0.05
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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