CEP63A3 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEP63A3 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP63A3/CEB63A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 66A, RDS(ON) = 10mΩ @VGS = 10V.
RDS(ON) = 14mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
66
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
260
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
75
W
PD
0.52
-55 to 175
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
Rev 2. 2006.Nov
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP63A3/CEB63A3
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 24A
VDS = 10V, ID = 30A
1
3
V
mΩ
mΩ
S
8
10
14
On-Resistance
11
22
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
2100
390
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
240
td(on)
tr
td(off)
tf
17
18
35
35
ns
ns
VDD = 15V, ID = 45A,
VGS = 10V, RGEN = 24Ω
Turn-On Rise Time
Turn-Off Delay Time
156
77
220
140
45
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
33
nC
nC
nC
VDS = 15V, ID = 45A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
5.5
8.2
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
30
A
V
VSD
VGS = 0V, IS = 30A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CEP63A3/CEB63A3
50
40
30
20
100
VGS=10,8,6,5V
80
60
V
GS=4V
GS=3V
40
25 C
V
10
0
20
-55 C
4
TJ=125 C
1
0
0
1
2
3
4
0
2
3
5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
2400
2000
1600
1200
800
400
0
ID=30A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP63A3/CEB63A3
103
10
8
VDS=15V
ID=45A
RDS(ON)Limit
100ms
102
6
1ms
10ms
4
DC
101
6
2
TC=25 C
TJ=175 C
Single Pulse
100
0
10-1
100
101
102
0
9
18
27
36
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
10-1
0.1
t1
t2
0.05
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-2
10-1
100
101
102
103
104
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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