CEP6426 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEP6426 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP6426/CEB6426
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 17A , RDS(ON) = 66mΩ @VGS = 10V.
RDS(ON) = 85mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
60
Gate-Source Voltage
±20
17
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
68
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
35
W
PD
0.29
-55 to 150
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
3.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1. 2007.Dec
http://www.cetsemi.com
1
CEP6426/CEB6426
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8A
1
3
V
mΩ
mΩ
S
45
65
7
66
85
VGS = 4.5V, ID = 6.4A
VDS = 10V, ID = 4.5A
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
680
80
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
45
td(on)
tr
td(off)
tf
10
2.9
20
5.8
59.4
5
ns
ns
VDD = 30V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
29.7
2.5
ns
ns
Total Gate Charge
Qg
12.9
1.6
17.1
nC
nC
nC
VDS = 30V, ID = 4.5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
2.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
17
A
V
VSD
VGS = 0V, IS = 8A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CEP6426/CEB6426
25
20
15
10
25
25 C
VGS=10,8,6,5V
20
15
10
5
VGS=4.0
V
5
0
TJ=125 C
1.0
-55 C
0
0
1
2
3
4
5
0.0
2.0
3.0
4.0
5.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1200
1000
800
600
400
200
0
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=8A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP6426/CEB6426
102
10
8
VDS=30V
ID=4.5A
1ms
10ms
RDS(ON)Limit
101
100
10-1
100ms
DC
6
4
2
TC=25 C
TJ=175 C
Single Pulse
0
10-1
100
101
102
0
3
6
9
12
15
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
0.1
10-1
0.05
0.02
t1
t2
0.01
1. Rθ JC (t)=r (t) * Rθ JC
2. Rθ JC=See Datasheet
3. TJM-TC = P* Rθ JC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-2
10-1
100
101
102
103
104
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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