CEP658N [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEP658N |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP658N/CEB658N
CEF658N
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
180V
180V
180V
RDS(ON)
0.22Ω
0.22Ω
0.22Ω
ID
@VGS
10V
CEP658N
CEB658N
CEF685N
16A
16A
16A d
10V
10V
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
G
S
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263
TO-220F
Drain-Source Voltage
VDS
VGS
ID
180
V
V
Gate-Source Voltage
±20
16
64
16 d
64 d
40
Drain Current-Continuous
Drain Current-Pulsed a
A
e
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
125
1.0
W
PD
0.32
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.0
62.5
3.1
65
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 2. 2006.Oct
http://www.cetsemi.com
1
CEP658N/CEB658N
CEF658N
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 160V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
180
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 16A
2
4
V
Static Drain-Source
0.2
0.22
Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 9A
10.8
760
155
60
S
Input Capacitance
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
17
32
90
38
25
5.4
12
35
60
ns
ns
VDD = 100V, ID = 11A,
VGS = 10V, RGEN = 9.1Ω
Turn-Off Delay Time
Turn-Off Fall Time
170
75
ns
ns
Total Gate Charge
Qg
32
nC
nC
nC
VDS = 160V, ID = 16A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
16
A
V
VSD
VGS = 0V, IS = 16A g
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
= 9.8A .
S(max)
2
CEP658N/CEB658N
CEF658N
50
12
10
8
25 C
40
30
20
VGS=10,9,8,7,6V
6
VGS
=
5V
4
-55 C
TJ=125 C
10
0
2
V
GS=4V
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1200
1000
800
600
400
200
0
ID=16A
VGS=10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP658N/CEB658N
CEF658N
102
10
8
VDS=160V
ID=16A
RDS(ON)Limit
4
100ms
101
1ms
10ms
DC
6
4
100
2
TC=25 C
TJ=150 C
Single Pulse
10-1
0
100
101
102
103
0
5
10
15
20
25
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
PDM
0.05
t1
t2
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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