CEP655N [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEP655N |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP655N/CEB655N
CEI655N/CEF655N
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
150V
150V
150V
150V
RDS(ON)
0.153Ω
0.153Ω
0.153Ω
0.153Ω
ID
@VGS
10V
CEP655N
CEB655N
CEI655N
CEF655N
15A
15A
15A
15A d
10V
10V
10V
D
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
S
CEB SERIES
TO-263(DD-PAK)
CEI SERIES
TO-262(I2-PAK)
CEP SERIES
TO-220
CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263/262 TO-220F
150
Drain-Source Voltage
VDS
VGS
ID
V
V
Gate-Source Voltage
±25
15
60
15 d
60 d
39
Drain Current-Continuous
Drain Current-Pulsed a
A
e
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
83
W
PD
0.56
0.26
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
3.8
65
RθJA
62.5
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1. 2005.June
http://www.cetsemi.com
1
CEP655N/CEB655N
CEI655N/CEF655N
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 150V, VGS = 0V
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
150
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8.2A
2
4
V
mΩ
S
118
5
153
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 40V, ID = 8.2A
Ciss
Coss
Crss
750
175
70
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
17
48
40
46
26
6
35
100
80
ns
ns
VDD = 75V, ID = 15A,
VGS = 10V, RGEN = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
90
ns
Total Gate Charge
Qg
34
nC
nC
nC
VDS = 120V, ID = 15A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
12.5
Drain-Source Diode Characteristics and Maximun Ratings
f
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
15
A
V
VSD
VGS = 0V, IS = 15A g
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
= 10A .
S(max)
g.Full package V test condition I = 10A .
SD
S
2
CEP655N/CEB655N
CEI655N/CEF655N
50
30
24
18
12
6
VGS=10,8,6,4V
25 C
40
30
20
-55 C
TJ=125 C
10
0
0
0
1
2
3
4
5
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1200
1000
800
600
400
200
0
ID=8.2A
VGS=10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP655N/CEB655N
CEI655N/CEF655N
102
10
8
RDS(ON)Limit
VDS=120V
ID=15A
4
100ms
101
1ms
6
10ms
DC
4
100
2
TC=25 C
TJ=175 C
Single Pulse
10-1
0
100
101
102
103
0
6
12
18
24
30
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
PDM
0.05
t1
t2
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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