CEB41A2 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEB41A2 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP41A2/CEB41A2
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 40A, RDS(ON) =20mΩ @VGS = 4.5V.
RDS(ON) =30mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
Limit
Units
V
Drain-Source Voltage
VDS
VGS
ID
20
Gate-Source Voltage
±12
40
V
Drain Current-Continuous
A
Drain Current-Pulsed a
120
A
IDM
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
60
W
PD
0.4
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
2005.June
http://www.cetsemi.com
4 - 82
CEP41A2/CEB41A2
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
20
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 20A
VGS = 2.5V, ID = 16A
VDS = 5V, ID = 20A
0.5
1.5
20
30
V
mΩ
mΩ
S
16
21
35
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Ciss
Coss
Crss
950
450
135
pF
pF
pF
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
20
20
72
20
15
2
40
40
ns
ns
VDD = 10 V, ID = 1A,
VGS = 4.5V, RGEN =6Ω
Turn-On Rise Time
Turn-Off Delay Time
130
40
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
20
nC
nC
nC
VDS = 10V, ID = 20A,
VGS = 4.5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
3
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
40
A
V
VSD
VGS = 0V, IS = 20A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
4 - 83
CEP41A2/CEB41A2
30
30
25
20
15
10
5
VGS=4.5,3.5,3.0,2.5V
25 C
24
18
12
VGS=2.0V
TJ=125 C
-55 C
6
0
0
0
1
2
3
0
1
2
3
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1800
1500
1200
900
600
300
0
ID=20A
VGS=4.5V
C
iss
C
oss
C
rss
0
2
4
6
8
10
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 84
CEP41A2/CEB41A2
103
5
4
3
2
1
0
VDS=10V
ID=20A
4
102
RDS(ON)Limit
100ms
1ms
10ms
DC
101
TC=25 C
TJ=175 C
Single Pulse
100
10-1
100
101
102
0
4
8
12
16
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
0.1
PDM
10-1
0.05
t1
t2
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-2
10-1
100
101
102
103
104
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 85
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