CEB540A [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEB540A |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP540A/CEB540A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 48mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
100
Gate-Source Voltage
±20
36
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
120
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
140
W
PD
0.91
310
W/ C
mJ
A
EAS
IAS
18
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
1.1
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
Rev .1 2006.March
Specification and data are subject to change without notice .
http://www.cetsemi.com
4 - 94
CEP540A/CEB540A
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
V
25
100
-100
µA
nA
nA
IGSSF
IGSSR
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 18A
2
4
V
40
48
mΩ
On-Resistance
Dynamic Characteristics c
Forwand Transconductance
Input Capacitance
gFS
VDS = 25V, ID = 18A
14
S
Ciss
Coss
Crss
832
240
105
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
13
11
32
15
37.5
6
40
35
65
45
48
ns
ns
VDD = 50V, ID = 18A,
VGS = 10V, RGEN = 5.1Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 80V, ID = 18A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
18
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
36
A
V
VSD
VGS = 0V, IS = 18A
1.3
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1.9mH, I = 18A, V = 50V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
4 - 95
CEP540A/CEB540A
80
60
40
20
0
60
50
40
30
VGS=10,9V
V
GS=8V
V
GS=7V
20
25 C
V
GS=6V
GS=5V
10
-55 C
TJ=125 C
V
0
0
1
2
3
4
5
6
2
4
6
8
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1200
1000
800
600
400
200
0
ID=18A
VGS=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 96
CEP540A/CEB540A
103
10
8
VDS=80V
ID=18A
RDS(ON)Limit
4
102
10µs
6
100µs
101
1ms
4
10ms
100
2
TC=25 C
TJ=175 C
Single Pulse
10-1
0
100
101
102
103
0
10
20
30
40
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
0.1
10-1
0.05
0.02
t1
t2
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-2
10-1
100
101
102
103
104
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 97
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