CEB50P03 [CET]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CEB50P03 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP50P03/CEB50P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -47A, RDS(ON) =20mΩ @VGS = -10V.
RDS(ON) =32mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
-30
Gate-Source Voltage
±20
-47
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
-188
79
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
W
PD
0.53
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
1.9
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
Rev 2. 2005.May
Specification and data are subject to change without notice .
http://www.cetsemi.com
1
CEP50P03/CEB50P03
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
V
5
5
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -25A
VGS = -4.5V, ID = -20A
VDS = -15V, ID = -25A
-1
-3
20
32
V
mΩ
mΩ
S
17
25
20
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
2220
550
pF
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
230
td(on)
tr
td(off)
tf
12
6
24
18
ns
ns
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-On Rise Time
Turn-Off Delay Time
110
35
22
7
140
70
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
28
nC
nC
nC
VDS = -15V, ID = -25A,
VGS = -5V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
8
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-2.1
-1.2
A
V
VSD
VGS = 0V, IS = -2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEP50P03/CEB50P03
25
20
15
10
100
25 C
-VGS=10,8,7,6,5V
80
60
40
-VGS=4V
-55 C
TJ=125 C
20
0
5
0
-VGS=3V
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3000
2500
2000
1500
1000
500
ID=-25A
VGS=-10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
102
101
100
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP50P03/CEB50P03
103
10
8
VDS=-15V
ID=-25A
RDS(ON)Limit
102
100ms
6
1ms
5
10ms
4
101
DC
2
TC=25 C
TJ=175 C
Single Pulse
100
0
10-1
100
101
102
0
5
10
15
20
25
30
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
PDM
t1
t2
0.05
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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