CZT5551 [CENTRAL]

NPN SILICON TRANSISTOR; NPN硅晶体管

CZT5551


型号：	CZT5551
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	NPN SILICON TRANSISTOR NPN硅晶体管晶体晶体管功率双极晶体管光电二极管放大器
文件：	总2页 (文件大小：96K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TM

Ce n t r a l

CZT5551

S e m ic o n d u c t o r Co r p .

NPN SILICON TRANSISTOR

DESCRIPTION:

TheCENTRALSEMICONDUCTORCZT5551

typeisanNPNsilicontransistormanufactured

by the epitaxial planar process, epoxy molded

inasurfacemountpackage, designedforhigh

voltage amplifier applications.

SOT-223 CASE

o

MAXIMUM RATINGS (T =25 C)

A

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V

V

V

180

160

6.0

600

2.0

V

V

V

mA

W

CBO

CEO

EBO

I

P

C

Power Dissipation

D

Operating and Storage

Junction Temperature

Thermal Resistance

o

o

T ,T

-65 to +150

62.5

C

C/W

J stg

Θ

JA

o

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

A

SYMBOL

TEST CONDITIONS

MIN

MAX

50

50

UNITS

I

I

I

V

V

V

=120V

=120V, T =100 C

=4.0V

nA

µA

nA

V

V

V

V

V

V

V

CBO

CBO

EBO

CBO

CEO

EBO

CE(SAT)

CE(SAT)

BE(SAT)

BE(SAT)

FE

CB

CB

EB

o

A

50

BV

BV

BV

V

V

V

V

h

I =100µA

180

160

6.0

C

I =1.0mA

C

I =10µA

E

I =10mA, I =1.0mA

0.15

0.20

1.00

1.00

C

B

B

B

B

I =50mA, I =5.0mA

C

I =10mA, I =1.0mA

C

I =50mA, I =5.0mA

C

V

=5.0V, I =1.0mA

80

80

30

CE

CE

CE

C

h

h

V

V

=5.0V, I =10mA

C

250

FE

=5.0V, I =50mA

FE

C

316

SYMBOL

TEST CONDITIONS

MIN

100

MAX

300

6.0

20

200

UNITS

MHz

pF

f

C

C

h

V

V

=10V, I =10mA, f=100MHz

T

ob

ib

fe

CE C

=10V, I =0, f=1.0MHz

CB

EB

CE

CE

E

V

V

V

=0.5V, I =0, f=1.0MHz

pF

C

=10V, I =1.0mA, f=1.0kHz

C

50

NF

=5.0V, I =200µA, R =10Ω

C

S

f=10Hz to 15.7kHz

8.0

dB

All dimensions in inches (mm).

LEAD CODE:

1) BASE

2) COLLECTOR

3) EMITTER

3) COLLECTOR

R2

317

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