CP759R [CENTRAL]
Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip; 小信号MOSFET P沟道增强型MOSFET芯片型号: | CP759R |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip |
文件: | 总2页 (文件大小:754K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CP759R
Small Signal MOSFET
P-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
9.1 x 9.1 MILS
Die Thickness
3.9 MILS
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
2.5 MILS DIAMETER
3.9 x 3.9 MILS
Al-Si - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 6 INCH WAFER
290,000
PRINCIPAL DEVICE TYPE
CMRDM7590
R0 (13-May 2010)
www.centralsemi.com
PROCESS CP759R
Typical Electrical Characteristics
R0 (13-May 2010)
www.centralsemi.com
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