CP773-CMPDM302PH-WN [CENTRAL]
Transistor;![CP773-CMPDM302PH-WN](http://pdffile.icpdf.com/pdf2/p00234/img/icpdf/CP773-CMPDM3_1373660_icpdf.jpg)
型号: | CP773-CMPDM302PH-WN |
厂家: | ![]() |
描述: | Transistor |
文件: | 总2页 (文件大小:654K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PROCESS CP773
MOSFET Transistor
P-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
39 x 27 MILS
Die Thickness
7.5 MILS
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
6.5 x 6.5 MILS
30 x 20 MILS
Al - 40,000Å
Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å
GEOMETRY
GROSS DIE PER 8 INCH WAFER
43,500
PRINCIPAL DEVICE TYPES
CMPDM302PH
CTLDM304P-M832DS
R2 (18-October 2012)
www.centralsemi.com
PROCESS CP773
Typical Electrical Characteristics
R2 (18-October 2012)
www.centralsemi.com
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