CP775-CWDM3011P-WS [CENTRAL]
Transistor;
| 型号： | CP775-CWDM3011P-WS |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor 开关 脉冲 晶体管 |
| 文件： | 总3页 (文件大小：716K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CP775
P-Channel MOSFET Die
Enhancement-Mode
www.centralsemi.com
The CP775 medium power P-Channel MOSFET is designed for power management and load
switching applications. The 7.5 mil thick die provides an ultra low profile device that is readily
attached using standard die attach wire bond processes.
APPLICATIONS:
• Load switching
• Power management
• DC-DC conversion
FEATURES:
• Low on-resistance, r
DS(ON)
• Low gate charge, Q
gs
• High drain current density
MECHANICAL SPECIFICATIONS:
Die Size
90 x 60 MILS
Die Thickness
7.5 MILS
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
14.1 x 18.8 MILS
52 x 88 MILS
Al - 40,000Å
Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å
3.15 MILS
8 INCHES
Gross Die Per Wafer
8,000
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
30
DS
Gate-Source Voltage
V
20
11
V
GS
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Operating and Storage Junction Temperature
I
A
D
I
50
A
DM
T , T
-55 to +150
°C
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
, I
V
V
V
V
V
V
V
V
V
V
=20V, V =0
100
nA
GSSF GSSR
GS
DS
GS
DS
I
=30V, V =0
GS
1.0
μA
V
DSS
BV
=0, I =250μA
30
DSS
GS(th)
SD
D
V
V
=V , I =250μA
1.0
1.4
3.0
1.3
20
V
GS DS
D
=0, I =2.6A
V
GS
GS
GS
DS
DS
DS
S
r
r
=10V, I =11A
12
15
mΩ
mΩ
pF
pF
pF
DS(ON)
DS(ON)
D
=4.5V, I =8.5A
30
D
C
C
C
=8.0V, V =0, f=1.0MHz
450
3100
320
rss
iss
GS
=8.0V, V =0, f=1.0MHz
GS
=8.0V, V =0, f=1.0MHz
oss
GS
R0 (8-August 2013)
CP775
P-Channel MOSFET Die
Enhancement-Mode
www.centralsemi.com
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Q
Q
Q
V
V
V
V
=15V, V =10V, I =11A
80
nC
g(tot)
gs
DD
DD
DD
DD
GS
D
=15V, V =10V, I =11A
7.0
10.1
49
nC
nC
ns
GS
D
=15V, V =10V, I =11A
gd
GS
D
t
t
=15V, V =10V, I =1.0A
on
off
GS
D
R =6.0Ω, R =15Ω
330
ns
G
L
R0 (8-August 2013)
CP775
Typical Electrical Characteristics
www.centralsemi.com
R0 (8-August 2013)
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