CP773-CMPDM302PH [CENTRAL]
Small Signal Field-Effect Transistor,;
| 型号： | CP773-CMPDM302PH |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：876K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CP773-CMPDM302PH
P-Channel MOSFET Die
Enhancement-Mode
www.centralsemi.com
The CP773-CMPDM302PH is a silicon P-Channel MOSFET designed for high speed pulsed
amplifier and driver applications.
MECHANICAL SPECIFICATIONS:
Die Size
39 x 27 MILS
7.5 MILS
Die Thickness
Gate Bonding Pad Size
Source Bonding Pad Size
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
6.5 x 6.5 MILS
33 x 21 MILS
Al – 40,000Å
Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å
3.15 MILS
8 INCHES
Gross Die Per Wafer
43,500
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
30
12
DS
Gate-Source Voltage
V
V
GS
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Operating and Storage Junction Temperature
I
2.4
A
D
I
9.6
A
DM
T , T
-55 to +150
°C
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=12V, V =0
100
nA
GSSF GSSR
GS
DS
GS
DS
I
=20V, V =0
GS
1.0
μA
V
DSS
BV
=0, I =250μA
30
DSS
GS(th)
D
V
=V , I =250μA
0.7
1.4
V
GS DS
D
r
r
=4.5V, I =1.2A
0.091
0.129
Ω
DS(ON)
GS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
D
=2.5V, I =1.2A
Ω
DS(ON)
D
g
=5.0V, I =2.4A
4.6
69
S
FS
D
C
C
C
=10V, V =0, f=1.0MHz
pF
pF
pF
nC
nC
nC
ns
ns
rss
iss
GS
=10V, V =0, f=1.0MHz
GS
800
62
=10V, V =0, f=1.0MHz
oss
GS
Q
Q
Q
=10V, V =5.0V, I =2.4A
GS
9.6
4.2
2.6
g(tot)
gs
D
=10V, V =5.0V, I =2.4A
GS
D
=10V, V =5.0V, I =2.4A
gd
GS
D
t
t
=10V, I =2.4A, R =10Ω
12
17
on
off
D
G
=10V, I =2.4A, R =10Ω
D
G
R0 (25-August 2016)
CP773-CMPDM302PH
Typical Electrical Characteristics
www.centralsemi.com
R0 (25-August 2016)
BARE DIE PACKING OPTIONS
BARE DIE IN TRAY (WAFFLE) PACK
CT: Singulated die in tray (waffle) pack.
(example: CP211-PART NUMBER-CT)
CM: Singulated die in tray (waffle) pack 100% visually inspected as
per MIL-STD-750, (method 2072 transistors, method 2073 diodes).
(example: CP211-PART NUMBER-CM)
UNSAWN WAFER
WN: Full wafer, unsawn, 100% tested with reject die inked.
(example: CP211-PART NUMBER-WN)
SAWN WAFER ON PLASTIC RING
WR: Full wafer, sawn and mounted on plastic ring,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WR)
SAWN WAFER ON METAL FRAME
WS: Full wafer, sawn and mounted on metal frame,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WS)
R0 (7-December 2015)
www.centralsemi.com
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Inventory bonding
• Custom bar coding for shipments
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Online technical data and parametric search
• SPICE models
• Special wafer diffusions
• PbSn plating options
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Customer specific screening
• Up-screening capabilities
• Application and design sample kits
• Custom product and package development
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
(000)
www.centralsemi.com
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