AT-42070 [AVAGO]
Up to 6 GHz Medium Power Silicon Bipolar Transistor; 高达6 GHz的中等功率硅双极晶体管
| 型号： | AT-42070 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| 文件： | 总5页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT-42070
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’sꢀ AT-42070ꢀ isꢀ aꢀ generalꢀ purposeꢀ NPNꢀ bipolarꢀ
transistorꢀthatꢀoffersꢀexcellentꢀhighꢀfrequencyꢀperformance.ꢀ
TheꢀAT-42070ꢀisꢀhousedꢀinꢀaꢀhermetic,ꢀhighꢀreliabilityꢀgold-
ceramicꢀ70ꢀmilꢀmicrostripꢀpackage.ꢀTheꢀ4ꢀmicronꢀemitter-
to-emitterꢀpitchꢀenablesꢀthisꢀtransistorꢀtoꢀbeꢀusedꢀinꢀmanyꢀ
differentꢀ functions.ꢀ Theꢀ 20ꢀ emitterꢀ fingerꢀ interdigitatedꢀ
geometryꢀyieldsꢀaꢀmediumꢀsizedꢀtransistorꢀwithꢀimpedancesꢀ
thatꢀareꢀeasyꢀtoꢀmatchꢀforꢀlowꢀnoiseꢀandꢀmediumꢀpowerꢀ
•ꢀ HighꢀOutputꢀPower:ꢀ
21.0ꢀdBmꢀTypicalꢀP1ꢀdBꢀatꢀ2.0ꢀGHzꢀ
20.5ꢀdBmꢀTypicalꢀP1ꢀdBꢀatꢀ4.0ꢀGHz
•ꢀ HighꢀGainꢀatꢀ1ꢀdBꢀCompression:ꢀ
15.0ꢀdBꢀTypicalꢀG1ꢀdBꢀatꢀ2.0ꢀGHzꢀ
10.0ꢀdBꢀTypicalꢀG1ꢀdBꢀatꢀ4.0ꢀGHzꢀꢀ
•ꢀ LowꢀNoiseꢀFigure:ꢀ1.9ꢀdBꢀTypicalꢀNFOꢀatꢀ2.0ꢀGHz
applications.ꢀThisꢀdeviceꢀisꢀdesignedꢀforꢀuseꢀinꢀlowꢀnoise,ꢀ •ꢀ HighꢀGain-BandwidthꢀProduct:ꢀ8.0ꢀGHzꢀTypicalꢀfT
widebandꢀamplifier,ꢀmixerꢀandꢀoscillatorꢀapplicationsꢀinꢀtheꢀ
•ꢀ HermeticꢀGold-ceramicꢀMicrostripꢀPackage
VHF,ꢀUHF,ꢀandꢀmicrowaveꢀfrequencies.ꢀAnꢀoptimumꢀnoiseꢀ
matchꢀnearꢀ50Ωꢀupꢀtoꢀ1ꢀGHz,ꢀmakesꢀthisꢀdeviceꢀeasyꢀtoꢀuseꢀ
asꢀaꢀlowꢀnoiseꢀamplifier.ꢀ
TheꢀAT-42070ꢀbipolarꢀtransistorꢀisꢀfabricatedꢀusingꢀAvago’sꢀ
70 mil Package
10ꢀGHzꢀf Self-Aligned-Transistorꢀ(SAT)ꢀprocess.ꢀTheꢀdieꢀisꢀ
Tꢀ
nitrideꢀpassivatedꢀforꢀsurfaceꢀprotection.ꢀExcellentꢀdeviceꢀ
uniformity,ꢀperformanceꢀandꢀreliabilityꢀareꢀproducedꢀbyꢀ
theꢀ useꢀ ofꢀ ion-implantation,ꢀ self-alignmentꢀ techniques,ꢀ
andꢀgoldꢀmetalizationꢀinꢀtheꢀfabricationꢀofꢀthisꢀdevice.ꢀ
AT-42070 Absolute Maximum Ratings
[2,4]
Absolute
Maximum
Thermal Resistance
θ = 150°C/W
jc
:
[1]
Symbol
Parameter
Units
V
V
V
V
V
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
1.5
ꢀ0
1ꢀ
80
600
EBO
Notes:
1.ꢀ Permanentꢀ damageꢀ mayꢀ occurꢀ ifꢀ anyꢀ ofꢀ
theseꢀlimitsꢀareꢀexceeded.
CBO
V
CEO
2.ꢀ Tcaseꢀꢀ=ꢀ25°C.
I
mA
mW
°C
3.ꢀ Derateꢀatꢀ6.7ꢀmW/°CꢀforꢀTcꢀ>ꢀ110°C.
4.ꢀ Theꢀ smallꢀ spotꢀ sizeꢀ ofꢀ thisꢀ techniqueꢀ
resultsꢀ inꢀ aꢀ higher,ꢀ thoughꢀ moreꢀ accurateꢀ
determinationꢀ ofꢀ θjcꢀ thanꢀ doꢀ alternateꢀ
methods.ꢀ Seeꢀ MEASUREMENTSꢀ sectionꢀ
“ThermalꢀResistance”ꢀforꢀmoreꢀinformation.
C
[ꢀ,3]
P
Power Dissipation
T
T
Junction Temperature
Storage Temperature
ꢀ00
-65 to ꢀ00
j
T
°C
STG
Electrical Specifications, T = 25°C
A
[1]
Symbol
Parameters and Test Conditions
Insertion Power Gain; V = 8 V, I = 35 mA
Units
Min.
Typ.
Max.
ꢀ
|S
|
f = ꢀ.0 GHz
f = 4.0 GHz
dB
10.5
11.5
5.5
ꢀ1E
CE
C
P
Power Output @ 1 dB Gain Compression
= 8 V, I = 35 mA
f = ꢀ.0 GHz
f= 4.0 GHz
f = ꢀ.0 GHz
f = 4.0 GHz
dBm
dB
ꢀ1.0
ꢀ0.5
15.0
10.0
1 dB
V
CE
C
G
1 dB Compressed Gain; V = 8 V, I = 35 mA
1 dB
CE
C
NF
Optimum Noise Figure: V = 8 V, I = 10 mA
f = ꢀ.0 GHz
f = 4.0 GHz
f = ꢀ.0 GHz
f = 4.0 GHz
dB
dB
1.9
3.0
14.0
10.5
O
CE
C
G
A
Gain @ NF ; V = 8 V, I = 10 mA
O
CE
C
f
Gain Bandwidth Product: V = 8 V, I = 35 mA
GHz
8.0
T
CE
C
h
Forward Current Transfer Ratio; V = 8 V, I = 35 mA
Collector Cutoff Current; V = 8 V
CB
—
µA
µA
pF
30
150
ꢀ70
0.ꢀ
ꢀ.0
FE
CE
C
I
I
CBO
Emitter Cutoff Current; V = 1 V
EBO
EB
[1]
C
CB
Collector Base Capacitance : V = 8 V, f = 1 MHz
0.ꢀ8
CB
Note:
1.ꢀ Forꢀthisꢀtest,ꢀtheꢀemitterꢀisꢀgrounded.
ꢀ
AT-42070 Typical Performance, T = 25°C
A
20
24
20
16
12
8
24
20
16
12
10 V
6 V
1.0 GHz
2.0 GHz
4.0 GHz
16
4 V
P
1dB
P
2.0 GHz
1dB
12
2.0 GHz
8
16
14
12
10
10 V
4.0 GHz
6 V
4 V
G
1dB
4.0 GHz
50
4
G
1dB
0
4
0
10
20
30
40
50
0
10
20
30
40
0
10
20
30
40
50
I
C
(mA)
I
(mA)
C
I
(mA)
C
Figure 1. Insertion Power Gain vs. Collector Current
and Frequency. VCE = 8 V.
Figure 2. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. VCE = 8 V.
Figure 3. Output Power and 1 dB Compressed Gain vs.
Collector Current and Voltage. f = 2.0 GHz.
40
35
30
24
21
G
A
18
15
12
9
MSG
25
20
4
3
2
1
0
MAG
15
2
|S
21E
|
10
5
6
NF
O
3
0
0
0.5
0.1
0.3 0.5 1.0
3.0 6.0
1.0
2.0
3.0 4.0 5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
Figure 5. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
3
AT-42070 Typical Scattering Parameters,
Common Emitter, Z = 50 Ω, T = ꢀ5°C, V = 8 V, I = 10 mA
O
A
CE
C
Freq.
GHz
0.1
0.5
1.0
1.5
ꢀ.0
ꢀ.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
S
S
S
22
11
21
12
Mag.
.70
.69
.69
.68
.69
.69
.70
.70
.69
.68
.68
.68
.70
Ang.
-49
dB
Mag.
ꢀ6.56
11.85
6.34
4.33
3.ꢀ6
ꢀ.64
ꢀ.ꢀꢀ
1.91
1.68
1.50
1.37
1.ꢀ6
1.15
Ang.
154
105
85
7ꢀ
6ꢀ
56
48
39
30
dB
Mag.
.016
.033
.044
.043
.05ꢀ
.054
.065
.076
.085
.096
.107
.1ꢀ1
.13ꢀ
Ang.
77
34
ꢀ9
37
4ꢀ
46
5ꢀ
51
55
49
50
45
44
Mag.
.91
.50
.40
.38
.37
.37
.39
.41
.43
.46
.48
.48
.48
Ang.
-18
-41
-44
-48
-54
-55
-63
-71
-77
-83
-87
-91
-98
ꢀ8.5
ꢀ1.5
16.0
1ꢀ.7
10.3
8.5
6.9
5.6
4.5
3.5
-36.0
-ꢀ9.6
-ꢀ7.ꢀ
-ꢀ7.4
-ꢀ5.6
-ꢀ5.4
-ꢀ3.8
-ꢀꢀ.4
-ꢀ1.4
-ꢀ0.4
-19.4
-18.3
-17.6
-137
-165
-179
169
164
157
151
144
137
1ꢀ8
117
107
ꢀꢀ
14
5
-3
ꢀ.7
ꢀ.0
1.ꢀ
AT-42070 Typical Scattering Parameters,
Common Emitter, Z = 50 Ω, T = ꢀ5°C, V = 8 V, I = 35 mA
O
A
CE
C
Freq.
GHz
0.1
0.5
1.0
1.5
ꢀ.0
ꢀ.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
S
S
S
22
11
21
12
Mag.
.5ꢀ
.66
.67
.67
.68
.69
.69
.69
.68
.67
.67
.67
.69
Ang.
-95
dB
Mag.
46.5ꢀ
14.33
7.36
4.97
3.74
3.04
ꢀ.55
ꢀ.ꢀ0
1.93
1.74
1.59
1.46
1.34
Ang.
139
95
80
69
60
55
47
39
ꢀ0
ꢀꢀ
13
5
dB
Mag.
.010
.019
.033
.040
.053
.065
.07ꢀ
.086
.097
.109
.1ꢀ6
.138
.15ꢀ
Ang.
50
46
51
59
59
65
65
59
60
54
50
46
40
Mag.
.77
.34
.ꢀ8
.ꢀ7
.ꢀ7
.ꢀ8
.ꢀ8
.30
.33
.36
.38
.39
.38
Ang.
-ꢀ9
-4ꢀ
-41
-44
-51
-53
-6ꢀ
-7ꢀ
-80
-85
-90
-94
-10ꢀ
33.4
ꢀ3.1
17.3
13.9
11.4
9.6
8.1
6.8
5.7
4.7
-40.0
-34.4
-ꢀ9.6
-ꢀ8.0
-ꢀ7.3
-ꢀ3.8
-ꢀꢀ.8
-ꢀ1.4
-ꢀ0.ꢀ
-19.3
-18.0
-17.ꢀ
-16.4
-163
179
169
160
157
151
145
139
13ꢀ
1ꢀ3
113
103
4.0
3.ꢀ
ꢀ.5
-4
A model for this device is available in the DEVICE MODELS section.
AT-42070 Noise Parameters: V = 8 V, I = 10 mA
CE
C
Γ
opt
Freq.
GHz
NF
O
dB
R /50
N
Mag
.05
.06
.10
.ꢀ3
.45
Ang
15
75
1ꢀ6
17ꢀ
-145
0.1
0.5
1.0
ꢀ.0
4.0
1.0
1.1
1.5
1.9
3.0
0.13
0.13
0.1ꢀ
0.11
0.17
4
Ordering Information
Part Number
No. of Devices
AT-4ꢀ070
100
70 mil Package Dimensions
.040
1.02
4
EMITTER
.020
.508
BASE
1
COLLECTOR
3
Notes:
(unless otherwise specified)
2
EMITTER
in
1. Dimensions are
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.070
1.78
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.035
.89
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢀ008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-ꢀ654EN
AV0ꢀ-1ꢀ18EN May 5, ꢀ008
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