AT-42085 [AGILENT]
Up to 6 GHz Medium Power Up to 6 GHz Medium Power; 高达6 GHz的中等功率高达6 GHz的中等功率
| 型号： | AT-42085 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| 文件： | 总5页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42085
The 20 emitter finger interdigi-
Features
85 Plastic Package
tated geometry yields a medium
sized transistor with impedances
that are easy to match for low
noise and medium power applica-
tions. Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
• High Output Power:
20.5dBmTypicalP1dB at2.0 GHz
• High Gain at 1 dB
Compression:
14.0dBTypicalG1dBat2.0 GHz
• Low Noise Figure:
2.0dBTypicalNFOat2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
• Low Cost Plastic Package
The AT-42085 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
Description
Hewlett-Packard’s AT-42085 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42085 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
techniques, and gold metalization
in the fabrication of this device.
5965-8913E
4-169
AT-42085 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Absolute
Maximum[1]
1.5
Symbol
VEBO
VCBO
VCEO
IC
Parameter
Units
V
θjc =130°C/W
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
Notes:
V
V
mA
mW
°C
20
12
80
500
150
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 7.7 mW/°C for TC > 85°C.
PT
Tj
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
TSTG
°C
-65to150
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA
f=1.0GHz
f=2.0GHz
f=4.0GHz
dB
15.5
17.0
11.0
5.0
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression
VCE =8V, IC = 35 mA
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f=2.0GHz dBm
f=4.0GHz
20.5
20.0
14.0
9.5
f=2.0GHz
f=4.0GHz
dB
NFO
GA
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f=2.0GHz
f=4.0GHz
f=2.0GHz
f=4.0GHz
dB
dB
2.0
3.5
13.5
9.5
Gain @ NF ; V = 8 V, I = 10 mA
O
C
CE
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
Collector Cutoff Current; VCB = 8 V
—
µA
µA
pF
30
150
270
0.2
2.0
ICBO
IEBO
CCB
Emitter Cutoff Current; VEB = 1 V
[1]
Collector Base Capacitance : VCB = 8 V, f = 1 MHz
0.32
Note:
1. For this test, the emitter is grounded.
4-170
AT-42085 Typical Performance, TA = 25°C
20
16
12
8
24
20
16
12
8
24
20
16
12
10 V
6 V
1.0 GHz
2.0 GHz
4.0 GHz
4 V
P
1dB
P
2.0 GHz
1dB
2.0 GHz
16
14
12
10
10 V
6 V
4 V
4.0 GHz
G
1dB
4
G
4.0 GHz
50
1dB
0
4
0
10
20
30
40
50
0
10
20
30
40
0
10
20
30
40
50
I
(mA)
I
(mA)
C
I
(mA)
C
C
Figure 1. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
Figure 3. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
40
35
30
25
20
15
10
5
24
21
G
MSG
A
18
15
12
9
4
3
2
1
0
MAG
2
|S
|
21E
NF
6
O
3
0
0
0.5
0.1
0.3 0.5 1.0
3.0 6.0
1.0
2.0
3.0 4.0 5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Figure 5. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
4-171
AT-42085 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8V,IC = 10mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.72
.66
.65
.65
.65
.66
.68
.68
.69
.69
.69
.71
.75
-50
-139
-168
175
163
157
149
141
133
125
114
103
91
28.5
21.0
15.5
12.2
9.7
8.0
6.3
5.1
3.9
3.0
2.2
1.4
0.6
26.52
11.23
5.96
4.06
3.06
2.51
2.07
1.79
1.57
1.41
1.28
1.17
1.07
152
103
84
71
60
55
46
38
29
21
12
3
-37.0
-29.2
-28.6
-27.0
-25.3
-24.0
-22.8
-21.4
-19.7
-18.5
-17.1
-15.9
-15.1
.014
.035
.037
.045
.054
.063
.072
.085
.104
.119
.139
.161
.177
73
36
39
46
51
60
65
64
64
63
58
55
49
.90
.53
.45
.43
.42
.42
.41
.43
.45
.46
.47
.44
.40
-16
-32
-33
-36
-41
-42
-48
-55
-61
-66
-71
-76
-85
-6
AT-42085 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8V,IC = 35mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.54
.61
.61
.62
.63
.64
.66
.67
.68
.68
.68
.71
.74
-90
-163
178
167
156
152
146
139
131
123
114
103
93
33.1
22.6
16.8
13.4
10.9
9.2
7.6
6.3
5.2
4.2
45.38
13.45
6.90
4.67
3.52
2.89
2.39
2.07
1.81
1.62
1.48
1.34
1.21
137
95
79
68
59
54
45
37
28
19
10
1
-40.1
-32.8
-29.5
-26.4
-23.9
-22.5
-21.2
-19.8
-18.6
-17.2
-16.4
-15.3
-14.5
.010
.023
.034
.048
.064
.075
.088
.102
.117
.138
.152
.171
.188
66
52
61
68
66
68
69
67
65
60
56
50
46
.76
.38
.34
.32
.31
.31
.30
.31
.33
.35
.35
.34
.31
-26
-30
-28
-31
-36
-40
-48
-58
-67
-73
-79
-85
-96
3.4
2.5
1.7
-8
A model for this device is available in the DEVICE MODELS section.
AT-42085 Noise Parameters: V = 8 V, I = 10 mA
CE
C
Γopt
Freq.
GHz
NFO
dB
RN/50
Mag
Ang
0.1
0.5
1.0
2.0
4.0
1.1
1.2
1.3
2.0
3.5
.05
.06
.10
.24
.46
16
77
131
-179
-128
0.13
0.13
0.12
0.11
0.25
4-172
85 Plastic Package Dimensions
.020
.51
EMITTER
4
0.143 ± 0.015
3.63 ± 0.38
45°
3
1
BASE
COLLECTOR
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
2
EMITTER
in .xxx = ± 0.005
mm .xx = ± 0.13
.085
2.15
.060 ± .010
1.52 ± .25
.006 ± .002
.15 ± .05
5° TYP.
.286 ± .030
7.36 ± .76
.07
0.43
4-173
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