AT-42085G [AVAGO]
Up to 6 GHz Medium Power Silicon Bipolar Transistor; 高达6 GHz的中等功率硅双极晶体管
| 型号： | AT-42085G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| 文件： | 总5页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
diameterꢀplasticꢀpackage.Theꢀ4ꢀmicronꢀemitter-to-emitterꢀ
AT-42085
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Features
Avago’sꢀ AT-42085ꢀ isꢀ aꢀ generalꢀ purposeꢀ NPNꢀ bipolarꢀ •ꢀ HighꢀOutputꢀPower:ꢀ
transistorꢀ thatꢀ offersꢀ excellentꢀ highꢀ frequencyꢀ
performance.ꢀTheꢀAT-42085ꢀisꢀhousedꢀinꢀaꢀlowꢀcostꢀ.085"ꢀ
20.5ꢀdBmꢀTypicalꢀP1ꢀdBꢀatꢀ2.0ꢀGHz
•ꢀ HighꢀGainꢀatꢀ1ꢀdBꢀCompression:ꢀ
14.0ꢀdBꢀTypicalꢀG1ꢀdBꢀatꢀ2.0ꢀGHzꢀꢀ
pitchꢀenablesꢀthisꢀtransistorꢀtoꢀbeꢀusedꢀinꢀmanyꢀdifferentꢀ
functions.ꢀTheꢀ20ꢀemitterꢀfingerꢀinterdigitatedꢀgeometryꢀ
yieldsꢀaꢀmediumꢀsizedꢀtransistorꢀwithꢀimpedancesꢀthatꢀ
areꢀ easyꢀ toꢀ matchꢀ forꢀ lowꢀ noiseꢀ andꢀ mediumꢀ powerꢀ
applications.ꢀApplicationsꢀincludeꢀuseꢀinꢀwirelessꢀsystemsꢀ
asꢀ anꢀ LNA,ꢀ gainꢀ stage,ꢀ buffer,ꢀ oscillator,ꢀ andꢀ mixer.ꢀ Anꢀ
optimumꢀnoiseꢀmatchꢀnearꢀ50Ωꢀupꢀtoꢀ1ꢀGHz,ꢀmakesꢀthisꢀ
deviceꢀeasyꢀtoꢀuseꢀasꢀaꢀlowꢀnoiseꢀamplifier.ꢀ
•ꢀ LowꢀNoiseꢀFigure:ꢀꢀ
2.0ꢀdBꢀTypicalꢀNFOꢀatꢀ2.0ꢀGHz
•ꢀ HighꢀGain-BandwidthꢀProduct:ꢀ8.0ꢀGHzꢀTypicalꢀfT
•ꢀ LowꢀCostꢀPlasticꢀPackage
•ꢀ Lead-freeꢀOptionꢀAvailable
TheꢀAT-42085ꢀbipolarꢀtransistorꢀisꢀfabricatedꢀusingꢀAvago’sꢀ
10ꢀGHzꢀfTꢀSelf-Aligned-Transistorꢀ(SAT)ꢀprocess.ꢀTheꢀdieꢀisꢀ
nitrideꢀpassivatedꢀforꢀsurfaceꢀprotection.ꢀExcellentꢀdeviceꢀ
uniformity,ꢀperformanceꢀandꢀreliabilityꢀareꢀproducedꢀbyꢀ
theꢀuseꢀofꢀion-implantation,ꢀself-alignmentꢀtechniques,ꢀ
andꢀgoldꢀmetalizationꢀinꢀtheꢀfabricationꢀofꢀthisꢀdevice.ꢀ
85 Plastic Package
AT-42085 Absolute Maximum Ratings
[2,4]
Absolute
Maximum
Thermal Resistance
:
[1]
Symbol
Parameter
Units
V
V
θ = 130°C/W
jc
V
V
V
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
1.5
ꢀ0
1ꢀ
80
500
EBO
Notes:
1.ꢀ Permanentꢀ damageꢀ mayꢀ occurꢀ ifꢀ anyꢀ ofꢀ
theseꢀlimitsꢀareꢀexceeded.
CBO
V
CEO
2.ꢀ Tcaseꢀꢀ=ꢀ25°C.
3.ꢀ Derateꢀatꢀ7.7ꢀmW/°CꢀforꢀTcꢀꢀ>ꢀ85°C.
4.ꢀ Seeꢀ MEASUREMENTSꢀ sectionꢀ “Thermalꢀ
Resistance”ꢀforꢀmoreꢀinformation.
I
mA
mW
°C
C
[ꢀ,3]
P
Power Dissipation
T
T
Junction Temperature
Storage Temperature
150
-65 to 150
j
T
°C
STG
Electrical Specifications, T = 25°C
A
Symbol
Parameters and Test Conditions
Insertion Power Gain; V = 8 V, I = 35 mA
Units
Min.
Typ.
Max.
ꢀ
|S
|
f = 1.0 GHz
f = ꢀ.0 GHz
f = 4.0 GHz
dB
15.5
17.0
11.0
5.0
ꢀ1E
CE
C
P
Power Output @ 1 dB Gain Compression
= 8 V, I = 35 mA
f = ꢀ.0 GHz
f= 4.0 GHz
f = ꢀ.0 GHz
f = 4.0 GHz
dBm
dB
ꢀ0.5
ꢀ0.0
14.0
9.5
1 dB
V
CE
C
G
1 dB Compressed Gain; V = 8 V, I = 35 mA
1 dB
CE
C
NF
O
Optimum Noise Figure: V = 8 V, I = 10 mA
f = ꢀ.0 GHz
f = 4.0 GHz
dB
ꢀ.0
3.5
CE
C
G
A
Gain @ NF ; V = 8 V, I = 10 mA
f = ꢀ.0 GHz
f = 4.0 GHz
dB
13.5
9.5
O
CE
C
f
h
Gain Bandwidth Product: V = 8 V, I = 35 mA
GHz
—
µA
µA
pF
8.0
150
T
CE
C
Forward Current Transfer Ratio; V = 8 V, I = 35 mA
30
ꢀ70
0.ꢀ
ꢀ.0
FE
CE
C
I
I
Collector Cutoff Current; V = 8 V
CB
CBO
Emitter Cutoff Current; V = 1 V
EBO
EB
[1]
C
Collector Base Capacitance : V = 8 V, f = 1 MHz
0.3ꢀ
CB
CB
Note:
1.ꢀ Forꢀthisꢀtest,ꢀtheꢀemitterꢀisꢀgrounded.
ꢀ
AT-42085 Typical Performance, T = 25°C
A
20
24
20
16
12
8
24
20
16
12
10 V
6 V
1.0 GHz
2.0 GHz
4.0 GHz
16
4 V
P
1dB
P
2.0 GHz
1dB
12
2.0 GHz
8
16
14
12
10
10 V
6 V
4 V
4.0 GHz
G
1dB
4
G
4.0 GHz
50
1dB
0
4
0
10
20
30
40
50
0
10
20
30
40
0
10
20
30
40
50
I
C
(mA)
I
(mA)
C
I
(mA)
C
Figure 1. Insertion Power Gain vs. Collector Current
and Frequency. VCE = 8 V.
Figure 2. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. VCE = 8 V.
Figure 3. Output Power and 1 dB Compressed Gain vs.
Collector Current and Voltage. f = 2.0 GHz.
40
35
24
21
G
MSG
A
30
18
15
12
9
25
20
4
3
2
1
0
MAG
15
2
|S
21E
|
NF
10
5
6
O
3
0
0
0.5
0.1
0.3 0.5 1.0
3.0 6.0
1.0
2.0
3.0 4.0 5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
Figure 5. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
3
AT-42085 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = ꢀ5°C, VCE = 8 V, IC = 10 mA
Freq.
GHz
0.1
0.5
1.0
1.5
ꢀ.0
ꢀ.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
11
S
S
S
22
21
12
Mag.
.7ꢀ
.66
.65
.65
.65
.66
.68
.68
.69
.69
.69
.71
.75
Ang.
-50
dB
ꢀ8.5
ꢀ1.0
15.5
1ꢀ.ꢀ
9.7
8.0
6.3
5.1
3.9
Mag.
ꢀ6.5ꢀ
11.ꢀ3
5.96
4.06
3.06
ꢀ.51
ꢀ.07
1.79
1.57
1.41
1.ꢀ8
1.17
1.07
Ang.
15ꢀ
103
84
71
60
55
46
38
ꢀ9
dB
Mag.
.014
.035
.037
.045
.054
.063
.07ꢀ
.085
.104
.119
.139
.161
.177
Ang.
73
36
39
46
51
60
65
64
64
63
58
55
49
Mag.
.90
.53
.45
.43
.4ꢀ
.4ꢀ
.41
.43
.45
.46
.47
.44
.40
Ang.
-16
-3ꢀ
-33
-36
-41
-4ꢀ
-48
-55
-61
-66
-71
-76
-85
-37.0
-ꢀ9.ꢀ
-ꢀ8.6
-ꢀ7.0
-ꢀ5.3
-ꢀ4.0
-ꢀꢀ.8
-ꢀ1.4
-19.7
-18.5
-17.1
-15.9
-15.1
-139
-168
175
163
157
149
141
133
1ꢀ5
114
103
91
3.0
ꢀ.ꢀ
1.4
0.6
ꢀ1
1ꢀ
3
-6
AT-42085 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = ꢀ5°C, VCE = 8 V, IC = 35 mA
Freq.
GHz
0.1
0.5
1.0
1.5
ꢀ.0
ꢀ.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
S
11
S
S
S
22
21
12
Mag.
.54
.61
.61
.6ꢀ
.63
.64
.66
.67
.68
.68
.68
.71
.74
Ang.
-90
dB
33.1
ꢀꢀ.6
16.8
13.4
10.9
9.ꢀ
7.6
6.3
5.ꢀ
4.ꢀ
Mag.
45.38
13.45
6.90
4.67
3.5ꢀ
ꢀ.89
ꢀ.39
ꢀ.07
1.81
1.6ꢀ
1.48
1.34
1.ꢀ1
Ang.
137
95
79
68
59
54
45
37
ꢀ8
19
10
1
dB
Mag.
.010
.0ꢀ3
.034
.048
.064
.075
.088
.10ꢀ
.117
.138
.15ꢀ
.171
.188
Ang.
66
5ꢀ
61
68
66
68
69
67
65
60
56
50
46
Mag.
.76
.38
.34
.3ꢀ
.31
.31
.30
.31
.33
.35
.35
.34
.31
Ang.
-ꢀ6
-30
-ꢀ8
-31
-36
-40
-48
-58
-67
-73
-79
-85
-96
-40.1
-3ꢀ.8
-ꢀ9.5
-ꢀ6.4
-ꢀ3.9
-ꢀꢀ.5
-ꢀ1.ꢀ
-19.8
-18.6
-17.ꢀ
-16.4
-15.3
-14.5
-163
178
167
156
15ꢀ
146
139
131
1ꢀ3
114
103
93
3.4
ꢀ.5
1.7
-8
AꢀmodelꢀforꢀthisꢀdeviceꢀisꢀavailableꢀinꢀtheꢀDEVICEꢀMODELSꢀsection.
AT-42085 Noise Parameters: V = 8 V, I = 10 mA
CE
C
Γ
opt
Freq.
GHz
0.1
NF
O
R /50
N
dB
1.1
1.ꢀ
1.3
ꢀ.0
3.5
Mag
.05
.06
.10
.ꢀ4
.46
Ang
16
77
131
-179
-1ꢀ8
0.13
0.13
0.1ꢀ
0.11
0.ꢀ5
0.5
1.0
ꢀ.0
4.0
4
Ordering Information
Part Numbers
AT-4ꢀ085
No. of Devices
10
AT-4ꢀ085G
100
Note:ꢀOrderꢀpartꢀnumberꢀwithꢀaꢀ“G”ꢀsuffixꢀifꢀlead-freeꢀoptionꢀ
isꢀdesired.
85 Plastic Package Dimensions
.020
.51
EMITTER
4
0.143 ± 0.015
3.63 ± 0.38
45°
3
1
BASE
COLLECTOR
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
2
EMITTER
in .xxx = ± 0.005
mm .xx = ± 0.13
.085
2.15
.060 ± .010
1.52 ± .25
.006 ± .002
.15 ± .05
5° TYP.
.286 ± .030
7.36 ± .76
.07
0.43
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢀ008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-ꢀ655EN
AV0ꢀ-1ꢀ19EN May 5, ꢀ008
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