AT-42086 [AGILENT]
Up to 6 GHz Medium Power Silicon Bipolar Transistor; 高达6 GHz的中等功率硅双极晶体管
| 型号： | AT-42086 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| 文件： | 总5页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42086
plastic package. The 4 micron
Features
86 Plastic Package
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscilla-
tor, and mixer. An optimum noise
match near 50 Ω up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
• High Output Power:
20.5dBmTypicalP1dB at2.0 GHz
• High Gain at 1 dB
Compression:
13.5dBTypicalG1dBat2.0 GHz
• Low Noise Figure:
1.9dBTypicalNFOat2.0 GHz
PinConnections
• High Gain-Bandwidth
EMITTER
Product: 8.0 GHz Typical f
T
4
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
BASE
COLLECTOR
1
3
The AT-42086 bipolar transistor is
fabricated using Hewlett- Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
Description
2
Hewlett-Packard’s AT-42086 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
EMITTER
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconductor
Devices.”
5965-8914E
4-174
AT-42086 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Absolute
Maximum[1]
1.5
Symbol
VEBO
VCBO
VCEO
IC
Parameter
Units
V
θjc =140°C/W
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
Notes:
V
V
mA
mW
°C
20
12
80
500
150
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
PT
Tj
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
TSTG
°C
-65to150
Part Number Ordering Information
Part Number
AT-42086-BLK
AT-42086-TR1
Increment
Comments
100
Bulk
Reel
1000
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
|S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA
f=1.0GHz
f=2.0GHz
f=4.0GHz
dB
15.0
16.5
10.5
4.5
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression
VCE =8V, IC = 35 mA
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f=2.0GHz dBm
f=4.0GHz
20.5
20.0
13.5
9.0
f=2.0GHz
f=4.0GHz
dB
NFO
GA
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f=2.0GHz
f=4.0GHz
f=2.0GHz
f=4.0GHz
dB
dB
1.9
3.5
13.0
9.0
Gain @ NF ; V = 8 V, I = 10 mA
O
C
CE
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
—
µA
µA
pF
30
150
270
0.2
2.0
ICBO
IEBO
CCB
0.32
Note:
1. For this test, the emitter is grounded.
4-175
AT-42086 Typical Performance, TA = 25°C
24
20
16
12
8
20
16
12
8
40
35
30
25
20
15
10
5
1.0 GHz
2.0 GHz
4.0 GHz
MSG
P
1dB
2.0 GHz
4.0 GHz
2.0 GHz
4.0 GHz
50
MAG
2
|S
|
21E
G
1dB
4
0
4
0
0
10
20
30
40
0
10
20
30
40
50
0.1
0.3 0.5 1.0
3.0 6.0
I
(mA)
I
(mA)
C
FREQUENCY (GHz)
C
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
Figure 2. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
24
21
G
A
18
15
12
9
4
3
2
1
0
6
NF
O
3
0
0.5
1.0
2.0
3.0 4.0 5.0
FREQUENCY (GHz)
Figure 4. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
4-176
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8V,IC = 10mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.68
.63
.63
.65
.66
.69
.71
.73
.75
.78
.80
.82
.85
-48
-141
-176
164
151
142
132
123
115
108
101
95
28.0
20.9
15.4
12.0
9.5
7.8
6.2
4.8
3.6
2.6
1.6
0.6
-0.2
25.12
11.07
5.87
3.98
2.99
2.44
2.04
1.74
1.51
1.34
1.20
1.08
0.97
153
102
80
65
53
45
34
24
14
5
-36.0
-29.9
-27.4
-26.0
-23.9
-23.1
-21.6
-19.7
-18.3
-17.2
-16.0
-14.8
-14.0
.016
.032
.043
.050
.064
.070
.084
.104
.122
.138
.159
.182
.200
65
42
43
46
52
53
54
53
51
50
46
40
35
.91
.54
.43
.40
.38
.36
.34
.33
.30
.31
.31
.32
.34
-15
-30
-30
-34
-40
-46
-54
-67
-80
-94
-4
-12
-21
-110
-129
-148
89
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8V,IC = 35mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.48
.57
.59
.61
.63
.68
.68
.71
.73
.76
.78
.81
.84
-94
-168
168
154
143
137
127
118
111
104
98
32.8
22.4
16.5
13.0
10.5
8.7
7.0
5.7
4.5
3.5
43.62
13.21
6.69
4.48
3.36
2.72
2.25
1.92
1.69
1.49
1.32
1.20
1.08
137
92
75
62
51
43
33
24
14
5
-37.7
-32.6
-28.7
-24.8
-23.0
-21.0
-19.7
-18.4
-17.3
-15.9
-15.2
-14.3
-13.4
.013
.023
.037
.057
.071
.089
.104
.121
.136
.161
.174
.193
.213
65
57
62
64
61
56
58
55
49
46
43
36
31
.77
.39
.33
.31
.29
.26
.25
.24
.20
.21
.21
.22
.25
-25
-28
-27
-31
-37
-45
-53
-65
-80
-95
2.4
1.6
0.7
-3
-12
-20
-115
-136
-156
91
85
A model for this device is available in the DEVICE MODELS section.
AT-42086 Noise Parameters: V = 8 V, I = 10 mA
CE
C
Γopt
Freq.
GHz
NFO
dB
RN/50
Mag
Ang
0.1
0.5
1.0
2.0
4.0
1.0
1.1
1.5
1.9
3.5
.04
.03
.06
.25
.58
8
62
168
-146
-100
0.13
0.12
0.12
0.12
0.52
4-177
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
4
45°
C
L
3
1
2.34 ± 0.38
(0.092 ± 0.015)
2
2.67 ± 0.38
(0.105 ± 0.15)
1.52 ± 0.25
(0.060 ± 0.010)
0.203 ± 0.051
5° TYP.
(0.006 ± 0.002)
8° MAX
0° MIN
0.66 ± 0.013
(0.026 ± 0.005)
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
4-178
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