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AT-42086-TR2G [AVAGO]

Up to 6 GHz Medium Power Silicon Bipolar Transistor; 高达6 GHz的中等功率硅双极晶体管
AT-42086-TR2G
型号： AT-42086-TR2G
厂家： AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述：

Up to 6 GHz Medium Power Silicon Bipolar Transistor
高达6 GHz的中等功率硅双极晶体管

晶体 小信号双极晶体管 射频小信号双极晶体管 放大器
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AT-42086  
Up to 6 GHz Medium Power  
Silicon Bipolar Transistor  
Data Sheet  
Description  
Features  
• High Output Power:  
20.5 dBm Typical P1 dB at 2.0 GHz  
Avago’s AT-42086 is a general purpose NPN bipolar tran-  
sistor that offers excellent high frequency performance.  
The AT-42086 is housed in a low cost surface mount .085"  
diameterplasticpackage.The4micronemitter-to-emitter  
pitch enables this transistor to be used in many different  
functions. The 20 emitter finger interdigitated geometry  
yieldsamediumsizedtransistorwithimpedancesthatare  
easy to match for low noise and medium power applica-  
tions. Applications include use in wireless systems as an  
• High Gain at 1 dB Compression:  
13.5 dB Typical G1 dB at 2.0 GHz  
• Low Noise Figure:  
1.9 dB Typical NFO at 2.0 GHz  
• High Gain-Bandwidth Product: 8.0 GHz Typical f  
• Surface Mount Plastic Package  
T
LNA, gain stage, buffer, oscillator, and mixer. An optimum • Tape-and-Reel Packaging Option Available  
noise match near 50Ω up to 1 GHz, makes this device easy  
to use as a low noise amplifier.  
• Lead-free Option Available  
TheAT-42086bipolartransistorisfabricatedusingAvago’s  
86 Plastic Package  
10 GHz f Self-Aligned-Transistor (SAT) process. The die is  
T
nitride passivated for surface protection. Excellent device  
uniformity, performance and reliability are produced by  
the use of ion-implantation, self-alignment techniques,  
and gold metalization in the fabrication of this device.  
Pin Connections  
EMITTER  
4
BASE  
1
COLLECTOR  
3
2
EMITTER  
AT-42086 Absolute Maximum Ratings  
[2]  
Thermal Resistance  
= 140°C/W  
:
Absolute  
Maximum  
[1]  
θ
Symbol  
VEBO  
VCBO  
VCEO  
IC  
Parameter  
Units  
V
jc  
Emitter-Base Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
1.5  
Notes:  
1. Permanent damage may occur if any  
of these limits are exceeded.  
V
20  
V
12  
2. TCASE = 25°C.  
mA  
mW  
°C  
80  
3. Derate at 7.1 mW/°C for TC > 80°C.  
PT  
Power Dissipation[2,3]  
Junction Temperature  
Storage Temperature  
500  
Tj  
150  
TSTG  
°C  
-65 to 150  
Electrical Specifications, T = 25°C  
A
Symbol  
Parameters and Test Conditions  
Units  
Min.  
Typ.  
Max.  
2
|S21E  
|
Insertion Power Gain; VCE = 8 V, IC = 35 mA  
f = 1.0 GHz  
f = 2.0 GHz  
f = 4.0 GHz  
dB  
15.0  
16.5  
10.5  
4.5  
P1 dB  
Power Output @ 1 dB Gain Compression  
CE = 8 V, IC = 35 mA  
f = 2.0 GHz  
f= 4.0 GHz  
dBm  
dB  
20.5  
20.0  
V
G1 dB  
NFO  
GA  
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA  
Optimum Noise Figure: VCE = 8 V, IC = 10 mA  
Gain @ NFO; VCE = 8 V, IC = 10 mA  
f = 2.0 GHz  
f = 4.0 GHz  
13.5  
9.0  
f = 2.0 GHz  
f = 4.0 GHz  
dB  
1.9  
3.5  
f = 2.0 GHz  
f = 4.0 GHz  
dB  
13.0  
9.0  
fT  
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA  
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA  
Collector Cutoff Current; VCB = 8 V  
GHz  
—
8.0  
hFE  
ICBO  
IEBO  
CCB  
30  
150  
270  
0.2  
2.0  
µA  
µA  
pF  
Emitter Cutoff Current; VEB = 1 V  
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz  
0.32  
Note:  
1. For this test, the emitter is grounded.  
2
AT-42086 Typical Performance, T = 25°C  
A
24  
20  
16  
12  
8
40  
35  
30  
25  
20  
15  
10  
5
1.0 GHz  
2.0 GHz  
20  
MSG  
4.0 GHz  
P
1dB  
16  
12  
8
2.0 GHz  
4.0 GHz  
2.0 GHz  
4.0 GHz  
50  
MAG  
2
|S  
21E  
|
G
1dB  
4
0
4
0
0
10  
20  
30  
40  
0
10  
20  
30  
40  
50  
0.1  
0.3 0.5  
1.0  
3.0 6.0  
I
C
(mA)  
I
C
(mA)  
FREQUENCY (GHz)  
Figure 1. Output Power and 1 dB Compressed Gain vs.  
Collector Current and Frequency. VCE = 8 V.  
Figure 2. Insertion Power Gain vs. Collector Current  
and Frequency. VCE = 8 V.  
Figure 3. Insertion Power Gain, Maximum Available  
Gain and Maximum Stable Gain vs. Frequency.  
VCE = 8 V, IC = 35 mA.  
24  
21  
G
A
18  
15  
12  
9
4
3
2
1
0
6
NF  
O
3
0
0.5  
1.0  
2.0  
3.0 4.0 5.0  
FREQUENCY (GHz)  
Figure 4. Noise Figure and Associated Gain vs.  
Frequency. VCE = 8 V, IC = 10 mA.  
3
AT-42086 Typical Scattering Parameters,  
Common Emitter, Z = 50 Ω, T =25°C, V =8 V, I = 10 mA  
O
A
CE  
C
Freq.  
GHz  
0.1  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
S
S
S
S
22  
11  
21  
12  
Mag.  
.68  
.63  
.63  
.65  
.66  
.69  
.71  
.73  
.75  
.78  
.80  
.82  
.85  
Ang.  
-48  
dB  
Mag.  
25.12  
11.07  
5.87  
3.98  
2.99  
2.44  
2.04  
1.74  
1.51  
1.34  
1.20  
1.08  
0.97  
Ang.  
153  
102  
80  
65  
53  
45  
34  
24  
14  
dB  
Mag.  
.016  
.032  
.043  
.050  
.064  
.070  
.084  
.104  
.122  
.138  
.159  
.182  
.200  
Ang.  
65  
42  
43  
46  
52  
53  
54  
53  
51  
50  
46  
40  
35  
Mag.  
.91  
.54  
.43  
.40  
.38  
.36  
.34  
.33  
.30  
.31  
.31  
.32  
.34  
Ang.  
-15  
-30  
-30  
-34  
-40  
-46  
-54  
-67  
-80  
-94  
-110  
-129  
-148  
28.0  
20.9  
15.4  
12.0  
9.5  
7.8  
6.2  
4.8  
3.6  
2.6  
1.6  
0.6  
-0.2  
-36.0  
-29.9  
-27.4  
-26.0  
-23.9  
-23.1  
-21.6  
-19.7  
-18.3  
-17.2  
-16.0  
-14.8  
-14.0  
-141  
-176  
164  
151  
142  
132  
123  
115  
108  
101  
95  
5
-4  
-12  
-21  
89  
AT-42086 Typical Scattering Parameters,  
Common Emitter, Z = 50 Ω, T =25°C, V =8 V, I = 35 mA  
O
A
CE  
C
Freq.  
GHz  
0.1  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
S
S
S
S
22  
11  
21  
12  
Mag.  
.48  
.57  
.59  
.61  
.63  
.68  
.68  
.71  
.73  
.76  
.78  
.81  
.84  
Ang.  
-94  
-168  
168  
154  
143  
137  
127  
118  
111  
104  
98  
dB  
Mag.  
43.62  
13.21  
6.69  
4.48  
3.36  
2.72  
2.25  
1.92  
1.69  
1.49  
1.32  
1.20  
1.08  
Ang.  
137  
92  
75  
62  
51  
43  
33  
24  
14  
5
dB  
Mag.  
.013  
.023  
.037  
.057  
.071  
.089  
.104  
.121  
.136  
.161  
.174  
.193  
.213  
Ang.  
65  
57  
62  
64  
61  
56  
58  
55  
49  
46  
43  
36  
31  
Mag.  
.77  
.39  
.33  
.31  
.29  
.26  
.25  
.24  
.20  
.21  
.21  
.22  
.25  
Ang.  
-25  
-28  
-27  
-31  
-37  
-45  
-53  
-65  
-80  
-95  
-115  
-136  
-156  
32.8  
22.4  
16.5  
13.0  
10.5  
8.7  
7.0  
5.7  
4.5  
3.5  
-37.7  
-32.6  
-28.7  
-24.8  
-23.0  
-21.0  
-19.7  
-18.4  
-17.3  
-15.9  
-15.2  
-14.3  
-13.4  
2.4  
1.6  
0.7  
-3  
-12  
-20  
91  
85  
AT-42086 Noise Parameters: V = 8 V, I = 10 mA  
CE  
C
Γ
opt  
Freq.  
GHz  
0.1  
0.5  
1.0  
NF  
O
R /50  
N
dB  
1.0  
1.1  
1.5  
1.9  
3.5  
Mag  
.04  
.03  
.06  
.25  
.58  
Ang  
8
62  
168  
-146  
-100  
0.13  
0.12  
0.12  
0.12  
0.52  
2.0  
4.0  
4
Ordering Information  
Part Numbers  
86 Plastic Package Dimensions  
No. of Devices  
100  
Comments  
Bulk  
0.51 0.13  
(0.020 0.005)  
AT-42086-BLKG  
AT-42086-TR1G  
AT-42086-TR2G  
4
1000  
7" Reel  
13" Reel  
4000  
45°  
C
L
3
1
2.34 0.38  
(0.092 0.015)  
2
2.67 0.38  
(0.105 0.15)  
1.52 0.25  
(0.060 0.010)  
0.203 0.051  
(0.006 0.002)  
5° TYP.  
8° MAX  
0° MIN  
0.66 0.013  
(0.026 0.005)  
2.16 0.13  
(0.085 0.005)  
0.30 MIN  
(0.012 MIN)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
For product information and a complete list of distributors, please go to our web site: www.avagotech.com  
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.  
Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-2656EN  
AV02-1460EN - August 8, 2008  

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