BLY92A [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLY92A |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLY92A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY92A is an NPN power transistor
designed for 138-175 MHz VHF communications.
It utilizes emitter ballasting to provide high VSWR
handling capability.
PACKAGE STYLE .380 4L STUD
FEATURES:
A
.112x45°
• Common Emitter, 28 V operation
• PG = 10 dB at 10W/175 MHz
• Omnigold™ Metalization System
• High VSWR capability
C
B
E
E
ØC
B
I
D
H
MAXIMUM RATINGS
J
G
#8-32 UNC-2A
1.0 A
65 V
IC
F
E
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
35 V
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
4.0 V
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
13.0 W
-65 °OC to +200 °C
-65 °C to +150 °C
13.5 °C/W
TSTG
θJC
J
CHARACTERISTICS TC = 25°C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 200 mA
IC = 200 mA
IE = 10 mA
65
65
35
4.0
V
BVCES
BVCEO
BVEBO
ICBO
V
V
V
V
CB = 30 V
CE = 5.0 V
1.0
mA
---
V
IC = 200 mA
POUT = 10 W
5.0
10
200
hFE
VCB = 30 V
f = 1.0 MHz
f = 175 MHz
15
Cob
pF
PG
dB
%
VCC = 28 V
PIN = 1.0 W
60
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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