BLY92C [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLY92C |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLY92C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The BLY92C is Designed for
Class C FM Amplifier Applications
up to 250 MHz.
PACKAGE STYLE .380" 4L STUD
FEATURES:
• PG = 11 dB Typical at 175 MHz
• High Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
4.0 A
65 V
IC
VCB
VCE
VEB
PDISS
TJ
35 V
4.0 V
40 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.4 OC/W
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
TSTG
θJC
ORDER CODE: ASI10758
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCES
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 200 mA
IE = 10 mA
VCB = 30 V
VCE = 5.0 V
65
V
BVCEO
BVEBO
ICBO
35
V
4.0
V
2.0
50
mA
---
hFE
IC = 200 mA
POUT = 15 W
35
Cob
VCB = 30 V
VCC = 28 V
f = 1.0 MHz
f = 175 MHz
40
pF
PG
10
50
11
60
dB
%
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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