BLY92C_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管型号: | BLY92C_07 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | NPN SILICON RF POWER TRANSISTOR |
文件: | 总1页 (文件大小:37K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLY92C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY92C is designed for
Class C FM amplifier applications up to
250 MHz.
PACKAGE STYLE .380 4L STUD
A
.112x45°
FEATURES:
1
B
• PG = 11 dB typical at 175 MHz
• High VSWR capability
2
3
• Omnigold™ Metalization System
ØC
4
I
D
H
MAXIMUM RATINGS
J
G
4.0 A
65 V
IC
#8-32 UNC-2A
F
E
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
35 V
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
4.0 V
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
40 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
4.4 °C/W
TSTG
θJC
J
1 = Collector
2&3 = Emitter
4 = Base
CHARACTERISTICS TC = 25°C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 200 mA
IC = 200 mA
IE = 10 mA
65
V
35
BVCEO
BVEBO
ICBO
V
4.0
V
V
CB = 30 V
CE = 5.0 V
2.0
mA
---
V
IC = 200 mA
POUT = 15 W
10
100
hFE
VCB = 30 V
f = 1.0 MHz
f = 175 MHz
40
50
Cob
pF
10
50
11
60
PG
dB
%
VCC = 28 V
PIN = 1.0 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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