BLY93C [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLY93C |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLY93C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY93C is Designed for
Class C, 28 V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
.112 x 45°
B
A
Ø.125 NOM.
FULL R
• Common Emitter
• PG = 9.0 dB at 25 W/175 MHz
• Omnigold™ Metalization System
E
C
E
J
.125
B
C
D
E
F
MAXIMUM RATINGS
I
H
G
IC
3.0 A
65 V
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
35 V
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
4.0 V
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
70 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
.004 / 0.10
.085 / 2.16
.160 / 4.06
TSTG
θJC
.240 / 6.10
J
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 10 mA
IE = 10 mA
VCE = 36 V
VCE = 5.0 V
35
V
BVCES
BVEBO
ICES
65
V
4.0
V
4.0
mA
---
hFE
IC = 1.25 A
10
100
COB
VCB = 28 V
f = 1.0 MHz
45
pF
GP
fT
VCE = 28 V
VCB = 28 V
f = 175 MHz
f = 100 MHz
9.0
dB
---
IE = 200 mA
625
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change witout notice.
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