BLY93C_07 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | BLY93C_07 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLY93C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLY93C is Designed for
Class C, 28V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L STUD
A
.112x45°
FEATURES:
C
B
• PG = 9.0 dB min. at 25 W/175 MHz
• Common Emitter Configuration
• Omnigold™ Metalization System
E
E
ØC
B
I
D
H
MAXIMUM RATINGS
J
G
#8-32 UNC-2A
3.0 A
65 V
IC
F
E
VCBO
VCEO
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
35 V
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
4.0 V
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
70 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
TSTG
θJC
J
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 10 mA
IE = 10 mA
35
V
V
V
65
BVCES
BVEBO
ICES
4.0
VCE = 36 V
CE = 5.0 V
4.0
mA
V
IC = 1.25 A
10
100
hFE
---
VCB = 28 V
f = 1.0 MHz
45
Cob
pF
VCE = 28 V
CB = 28 V
f = 175 MHz
f = 100 MHz
9.0
GP
fT
dB
V
IE = 200 mA
625
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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