ASI10618 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI10618 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MLN1027F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG
A
DESCRIPTION:
ØD
.060 x 45°
CHAMFER
The ASI MLN1027F is Designed for
C
B
E
FEATURES:
F
G
H
I
J
K
L
·
P
N
·
M
· Omnigold™ Metalization System
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.032 / 0.81
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS
.255 / 6.48
.132 / 3.35
300 mA
20 V
IC
.125 / 3.18
.117 / 2.97
.110 / 2.79
.117 / 2.97
VCE
PDISS
TJ
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
--- W
J
-65 OC to +200 OC
-65 OC to +200 OC
25 OC/W
K
L
M
N
P
TSTG
qJC
ORDER CODE: ASI10618
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1 mA
IC = 5 mA
IE = 1 mA
VCE = 18 V
VCE = 5.0 V
50
V
BVCEO
BVEBO
ICEO
20
V
3.5
V
0.5
mA
---
hFE
IC = 100 mA
POUT = 0.5 W
15
12
120
COB
PG
VCB = 28 V
f = 1.0 MHz
f = 1.0 GHz
3.5
pF
dB
VCE = 20 V
ICQ = 100mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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