ASI10627 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI10627 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MLN1033S
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
A
45°
The ASI MLN1033S is Designed for
D
S
B
S
FEATURES:
G
·
C
D
·
J
· Omnigold™ Metalization System
E
I
F
G
H
K
MAXIMUM RATINGS
#8-32 UNC
MINIMUM
inches / mm
MAXIMUM
inches / mm
10 A
60 V
IC
DIM
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
1.055 / 26.80
.230 /5.84
A
B
C
D
E
F
G
H
I
VCB
VCE
PDISS
TJ
.285 / 7.24
.007 / 0.18
.137 / 3.48
35 V
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
17 OC/W
.572 / 14.53
.130 / 3.30
.245 / 6.22
.255 / 6.48
.640 / 16.26
.175 / 4.45
.275 / 6.99
.217 / 5.51
.285 / 7.24
J
K
TSTG
qJC
ORDER CODE: ASI10627
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IE = 10 mA
VE = 28 V
35
V
BVCER
BVEBO
ICES
RBE = 10 W
60
V
4.0
V
5
mA
---
hFE
VCE = 5.0 V
IC = 1.0 A
10
100
Cob
PG
VCB = 28 V
f = 1.0 MHz
f = 1.0 GHz
5.5
pF
dB
VCE = 18 V
POUT = 2.0 W
ICQ = 220 mA
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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