ASI10625 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI10625 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MLN1030SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .205 4L STUD
The ASI MLN1030SS is Designed
for
D
A
C
FEATURES:
B
·
G
E
·
F
H
· Omnigold™ Metalization System
#8-32UNC
J
MAXIMUM RATINGS
10 A
60 V
IC
MINIMUM
inches mm
MAXIMUM
inches mm
DIM
/
/
VCB
VCE
PDISS
TJ
.976 / 24.800
.976 / 24.800
.028 / 0.700
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
A
B
C
D
E
F
35 V
.138 / 3.500
.161 / 4.100
.098 / 2.500
.200 / 5.100
.196 / 5.000
.110 / 2.800
.208 / 5.300
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
20 OC/W
G
.004 / 0.100
.425 / 10.800
.200 / 5.100
.006 / 0.150
.465 / 11.800
2.05 / 5.200
H
I
J
TSTG
qJC
ORDER CODE: ASI10625
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IE = 10 mA
VE = 28 V
35
V
BVCER
BVEBO
ICES
RBE = 10 W
60
V
4.0
V
5.0
mA
---
hFE
VCE = 5.0 V
IC = 1.0 A
10
10
100
Cob
PGE
VCB = 28 V
f = 1.0 MHz
f = 1.0 GHz
5.0
pF
dB
VCE = 20 V
ICQ = 150 mA
POUT = 1.0 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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