ASI10623 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管型号: | ASI10623 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | NPN SILICON RF POWER TRANSISTOR |
文件: | 总1页 (文件大小:22K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MLN1030S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L STUD
The ASI MLN1030S is Designed for
A
45°
D
FEATURES:
S
S
B
·
G
·
C
D
· Omnigold™ Metalization System
J
E
I
F
MAXIMUM RATINGS
G
H
K
#8-32 UNC
0.250 A
40 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCEO
VEBO
PDISS
TJ
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
1.055 / 26.80
.230 /5.84
A
B
C
D
E
F
G
H
I
28 V
.285 / 7.24
.007 / 0.18
.137 / 3.48
3.5 V
.572 / 14.53
.130 / 3.30
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
20 OC/W
.245 / 6.22
.255 / 6.48
.640 / 16.26
.175 / 4.45
.275 / 6.99
.217 / 5.51
.285 / 7.24
J
K
TSTG
qJC
ORDER CODE: ASI10623
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1 mA
IC = 1 mA
IE = 1 mA
VCB = 24 V
VCE = 5.0 V
40
V
BVCEO
BVEBO
ICBO
28
V
3.5
V
0.5
mA
---
hFE
IC = 100 mA
ICQ = 150 mA
20
120
COB
PG
VCB = 28 V
f = 1.0 MHz
f = 1.0 GHz
5.0
pF
dB
VCE = 20 V
9.0
POUT = 1.0 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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