ASI10620 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI10620 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MLN1027SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027SL is Designed for
PACKAGE STYLE .280 4L PILL
A
FEATURES:
S
·
·
· Omnigold™ Metalization System
ØB
D
G
S
ØC
MAXIMUM RATINGS
0.250 A
40 V
IC
D
F
VCBO
VCEO
VEBO
PDISS
TJ
E
28 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
3.5 V
.220 / 5.59
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
A
B
C
D
E
F
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
25 OC/W
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
TSTG
qJC
ORDER CODE: ASI10620
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 1.0 mA
IC = 1.0 mA
IE = 1.0 mA
VCB = 24 V
VCE = 5.0 V
40
V
BVCEO
BVEBO
ICBO
28
V
3.5
V
0.5
mA
---
hFE
IC = 100 mA
ICQ = 100 mA
20
120
COB
PG
VCB = 28 V
f = 1.0 MHz
f = 1.0 GHz
3.5
pF
dB
VCE = 20 V
9.0
POUT = 0.5 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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