AOL1420 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1420 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOL1420 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1420L is a Green
Product ordering option. AOL1420 and AOL1420L
are electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 3.7mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
85
V
TC=25°C G
TC=100°C B
ID
63
IDM
Pulsed Drain Current
Continuous Drain
Current G
150
18
A
TA=25°C
TA=70°C
IDSM
IAR
14
Avalanche Current C
30
A
C
Repetitive avalanche energy L=0.1mH
EAR
112
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.1
1.3
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
19.6
25
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
60
°C/W
°C/W
RθJC
0.9
1.5
Alpha & Omega Semiconductor, Ltd.
AOL1420
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
μA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250μA
1
1.8
V
GS=10V, VDS=5V
GS=10V, ID=20A
85
A
V
2.9
4.4
3.7
5.5
5.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
4.4
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
106
0.72
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3200 3840
590
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
414
V
0.54
0.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
63
33
76
40
nC
nC
nC
nC
ns
VGS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
8.6
17.6
12
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=0.75Ω,
Turn-On Rise Time
15.5
40
ns
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
14
ns
trr
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
34
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
41
ns
Qrr
30
nC
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
150
VDS=5V
50
125
100
75
50
25
0
10V
40
30
20
10
0
4.0V
125°C
25°C
3.5V
2
VGS=3V
1.5
2
2.5
3
3.5
4
4.5
0
1
3
4
5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
8
7
6
5
4
3
1.6
ID=20A
1.4
1.2
1
VGS=10V
VGS=4.5V
VGS=4.5V
VGS=10V
2
0
0.8
10
20
30
40
50
60
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
8
6
4
2
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
ID=20A
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
8
VDS=15V
ID=20A
4000
3000
2000
1000
0
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
DS (Volts)
20
25
30
V
Figure 8: Capacitance Characteristics
1000
100
10
1000
800
600
400
200
0
TJ(Max)=175°C
TC=25°C
10μs
100μs
RDS(ON)
limited
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
1
0.1
0.0001 0.001 0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJA=1.5°C/W
1
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L ⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
100
80
60
40
20
0
0.01
0.1
1
10
100
1000
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
0.1
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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