AOL1422 [AOS]
Transistor;
| 型号： | AOL1422 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1422 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is ESD protected and it is
suitable for use in load switching and general
purpose applications.
VDS (V) = 30V
ID = 85A
(VGS = 10V)
RDS(ON) < 3.7mΩ (VGS = 10V)
DS(ON) < 5.4mΩ (VGS = 4.5V)
R
Rg,Ciss,Coss,Crss Tested
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Ultra SO-8TM Top View
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,H
±20
85
V
TC=25°C
TC=100°C
ID
85
Pulsed Drain Current C
IDM
A
150
19
Continuous Drain
Current G
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
IDSM
PD
15
100
50
Power Dissipation B
Power Dissipation A
W
2.08
1.3
PDSM
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
19.6
50
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
60
Steady-State
Steady-State
RθJC
0.9
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
5
10
3
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±16V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1
1.7
V
A
150
3
3.7
5.2
5.4
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
4.2
4.4
71
mΩ
VGS=4.5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
S
V
A
0.69
1
Maximum Body-Diode Continuous Current
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5450 6800
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
760
540
V
GS=0V, VDS=0V, f=1MHz
1
1.5
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
84
42
12
21
13
9.8
49
16
42
31
112
56
nC
nC
nC
nC
ns
Qg (4.5V)
V
GS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL=0.75Ω,
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
56
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: Jul 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
150
125
100
75
VDS=5V
10V
4.5V
4.0V
125°C
3.5V
3V
25°C
50
`
25
-40°C
VGS=2.5V
4
0
0
0
1
2
3
5
1.5
2
2.5
VGS(Volts)
3
3.5
VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6
5
4
3
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
ID=20A
VGS=10V
`
0.8
0.6
0
5
10
15
20
25
30
-60 -30
0
30
60
90
120 150 180
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
14
100
ID=20A
12
10
8
10
125°C
1
25°C
0.1
25°C
0.01
6
125°C
-40°C
0.001
0.0001
0.00001
4
2
-40°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10
8
Ciss
VDS=15V
ID=20A
6
Crss
1000
4
Coss
2
100
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
90
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
1000
100
10
RDS(ON)
TJ(Max)=175°C
TC=25°C
limited
10µs
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
1
10
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
J,PK=Tc+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note B)
1000
100
10
TJ(Max)=150°C
TA=25°C
1
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
T
Ton
Single Pulse
0.001
T
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1422
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching TestCircuit& Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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