AOL1424 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1424 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1424
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1424 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V,while
retaining a 20V VGS(MAX) rating. It is ESD
protected.This device is suitable for use as a load
switch. Standard Product AOL1424 is Pb-free (meets
ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 70A (VGS = 10V)
R
DS(ON) < 5.4mΩ (VGS = 10V)
DS(ON) < 8mΩ (VGS = 4.5V)
R
ESD Protected
UIS Tested!
Rg, Ciss,Coss,Crss Tested
UltraSO-8TM Top View
Fits SOIC8
footprint !
D
D
Bottom tab
G
connected to
drain
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B
±20
V
A
TC=25°C
70
TC=100°C
ID
50
Pulsed Drain Current C
IDM
120
TA=25°C
TA=70°C
23
Continuous Drain
Current A
A
IDSM
IAR
18
Avalanche CurrentH
30
A
Repetitive avalanche energy L=0.3mH H
EAR
135
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
5
3
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
24
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case D
RθJA
A
Steady-State
Steady-State
45
55
RθJC
2.5
3.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±16V
10
2.5
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.4
1.8
V
A
VGS=10V, VDS=5V
120
V
GS=10V, ID=20A
4.5
6.3
6.5
67
5.4
7.6
8.0
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.7
1.0
70
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1803 2170
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
387
238
VGS=0V, VDS=0V, f=1MHz
1.3
2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
36
19
48
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
3.9
8.7
7.6
6.4
27
ns
VGS=10V, VDS=15V, RL=0.75Ω,
R
GEN=3Ω
tD(off)
tf
ns
8.5
27
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
33
ns
Qrr
17
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
θJA
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. The SOA
A
curve provides a single pulse rating.
H. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev3: July 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
30
25
20
15
10
5
10V
4.5V
6V
4V
5V
VDS=5V
125°
VGS=3.5V
-40°C
25°C
3V
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
VDS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
ID=20A
6
4
0.8
0.6
VGS=10V
2
0
5
10
15
D (A)
20
25
30
-60 -30
0
30
60
90 120 150 180
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
-40°C
25°C
0
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
1.4
2
3
4
5
6
7
8
9
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
8
3000
2500
2000
1500
1000
500
VDS=15V
ID=20A
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
140
120
100
80
60
40
20
0
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
100µ
1m
DC
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
50
40
30
20
10
0
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
CASE (°C)
Figure 13: Current De-rating (Note B)
100
125
150
175
T
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
0.01
Single Pulse
Ton
10
T
J,PK=TA+PDM.ZθJA.RθJA
T
RθJA=55°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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