AOL1424L [AOS]
Transistor;![AOL1424L](http://pdffile.icpdf.com/pdf2/p00260/img/icpdf/AOL1424L_1568017_icpdf.jpg)
型号: | AOL1424L |
厂家: | ![]() |
描述: | Transistor |
文件: | 总5页 (文件大小:223K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AOL1424
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1424 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V,while
retaining a 20V VGS(MAX) rating. It is ESD
VDS (V) = 30V
ID = 70A (VGS = 10V)
R
DS(ON) < 5.4mΩ (VGS = 10V)
DS(ON) < 8mΩ (VGS = 4.5V)
protected.This device is suitable for use as a load
switch. Standard Product AOL1424 is Pb-free (meets
ROHS & Sony 259 specifications). AOL1424L is a
Green Product ordering option. AOL1424 and
AOL1424L are electrically identical.
R
ESD Rating: 2000V HBM
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B
±20
70
V
A
TC=25°C
TC=100°C
ID
55
Pulsed Drain Current C
IDM
120
24
TA=25°C
Continuous Drain
Current A
A
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
IDSM
PD
19
50
W
Power Dissipation B
Power Dissipation A
25
5
3
PDSM
W
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
Symbol
Typ
20
Max
24
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
45
55
RθJC
2.5
3.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
10
2.5
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.4
V
A
VGS=10V, VDS=5V
120
V
GS=10V, ID=20A
4.5
6.3
6.5
71
5.4
7.6
8.0
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.7
1.0
35
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2520 3050
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
356
273
VGS=0V, VDS=0V, f=1MHz
1.3
2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
51
25.8
6.5
65
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
13.2
7
9.5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
R
tD(off)
tf
33
ns
9.1
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
58.4
127.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
71
ns
Qrr
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C. The power dissipation P
and current rating IDSM
θJA
DSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
SOA curve provides a single pulse rating.
Rev1:Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
30
25
20
15
10
5
5V
10V
4.5V
4V
VDS=5V
125°
6V
-40°C
25°C
VGS=3.5V
3V
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
VDS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=4.5V
ID=20A
6
4
0.8
0.6
VGS=10V
2
0
5
10
15
D (A)
20
25
30
-60 -30
0
30
60
90
120 150 180
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
-40°C
0
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
1.4
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
10
8
VDS=15V
ID=20A
4000
3500
3000
2500
2000
1500
1000
500
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
50
60
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
140
120
100
80
60
40
20
0
10µs
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
100µ
1m
DC
10ms
0.1
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0
25
50
75
TCASE (°C)
Figure 13: Current De-rating (Note B)
100
125
150
175
T
CASE (°C)
Figure 12: Power De-rating (Note B)
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
0.01
0.001
T
J,PK=TA+PDM.ZθJA.RθJA
Single Pulse
0.0001
Ton
10
T
RθJA=24°C/W
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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