AOL1420_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1420_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
R
DS(ON) < 3.7mΩ (VGS = 10V)
DS(ON) < 5.5mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
85
TC=25°C G
TC=100°C B
Continuous Drain
Current B,G
ID
63
A
Pulsed Drain Current
IDM
150
19
TA=25°C
TA=70°C
Continuous Drain
Current G
Avalanche Current C
IDSM
IAR
15
30
A
Repetitive avalanche energy L=0.1mHC
EAR
112
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.08
1.3
PDSM
W
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
t ≤ 10s
19.6
25
°C/W
RθJA
Maximum Junction-to-Ambient A
Steady-State
50
60
°C/W
°C/W
Maximum Junction-to-Case C
Steady-State
RθJC
0.9
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
85
A
V
GS=10V, ID=20A
2.9
4.4
3.7
5.5
5.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
DS=5V, ID=20A
IS=1A,VGS=0V
4.4
mΩ
S
V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
106
0.72
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3700 4400
700
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
390
VGS=0V, VDS=0V, f=1MHz
0.54
0.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
63
33
76
40
nC
nC
nC
nC
ns
V
GS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
8.6
17.6
12
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
15.5
40
ns
R
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
14
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
34
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
41
ns
Qrr
30
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev3: Jun 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
150
VDS=5V
50
125
10V
40
4.0V
125°C
100
75
50
25
0
30
20
10
0
25°C
3.5V
2
VGS=3V
1.5
2
2.5
3
3.5
4
4.5
0
1
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
8
7
6
5
4
3
1.6
ID=20A
1.4
1.2
1
VGS=10V
VGS=4.5V
VGS=4.5V
VGS=10V
2
0
0.8
10
20
30
D (A)
40
50
60
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
8
6
4
2
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
ID=20A
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
8
VDS=15V
ID=20A
Ciss
4000
3000
2000
1000
0
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
1000
100
10
1000
800
600
400
200
0
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
1
0.1
0.0001 0.001 0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJA=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
TA=25°C
L ⋅ ID
tA
=
BV −VDD
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
100
80
60
40
20
0
100
80
60
40
20
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
D=Ton/T
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60 °C/W
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
Single Pulse
0.0001
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1420
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr=- Idt
Vds +
DUT
Vgs
Isd
Vds -
Ig
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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