AOD420_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD420_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD420ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto
provideꢀexcellentꢀRDS(ON)ꢀandꢀlowꢀgateꢀcharge.ꢀThis
deviceꢀisꢀsuitableꢀforꢀuseꢀasꢀaꢀloadꢀswitchꢀorꢀinꢀPWM
applications.
VDSꢀ(V)ꢀ=ꢀ30V
IDꢀ=ꢀ10Aꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<ꢀ28mΩꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<ꢀ42mΩꢀ(VGSꢀ=ꢀ4.5V)
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
VDS
30
±20
10
V
V
VGS
TC=25°C
ContinuousꢀDrain
CurrentꢀG
TC=100°C
ID
10
A
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀC
IDM
IAR
EAR
30
15
A
36
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
60
PD
W
30
TA=25°C
2.5
PDSM
W
PowerꢀDissipationꢀA
1.6
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
SteadyꢁState
SteadyꢁState
RθJA
MaximumꢀJunctionꢁtoꢁCaseꢀB
RθJC
1.9
2.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD420
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=10A
VGS(th)
ID(ON)
1
1.8
40
A
21
28
40
42
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
31
VGS=4.5V, ID=7A
VDS=5V, ID=10A
IS=1A,VGS=0V
32.5
15.6
0.75
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
10
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
710
120
72
850
3.6
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
14.4
7
18
nC
nC
nC
nC
ns
8.4
VGS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.6
2.7
5.6
2.4
15.6
2.2
13.4
4.4
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev5: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
20
16
12
8
10V
5V
7V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
3.0V
25°C
4
0
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
50
45
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
ID=10A
VGS=10V
VGS=4.5V
VGS=10V
VGS=4.5V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
50
40
30
20
10
ID=10A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
8
VDS=15V
ID=10A
800
600
400
200
0
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
60
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
50
40
30
20
10
0
1ms
100µs
10ms
0.1s
1s
1.0
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.Rθ
RθJA=50°C/W
JA
1
0.1
PD
0.01
Ton
10
Single Pulse
0.001
T
0.001
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD420
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明